Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE Научная публикация
Конференция |
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials 31 авг. - 5 сент. 1997 , Stockholm |
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Сборник | Silicon carbide, III-nitrides and related materials : ICSCIII-N'97 : Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997 Сборник, 1998. 1606 c. ISBN 978-0-87849-790-4. |
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Журнал |
Materials Science Forum
ISSN: 0255-5476 , E-ISSN: 1662-9752 |
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Вых. Данные | Год: 1998, Том: 264-268, Страницы: 259-262 Страниц : 4 DOI: 10.4028/www.scientific.net/msf.264-268.259 | ||||||||
Ключевые слова | Molecular Beam Epitaxy, Homoepitaxy, RHEED | ||||||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | German Research Foundation | 196 (No. A03) |
Реферат:
High-resolution transmission electron microscopy images of 3C-SiC layers grown on SiC (0001) substrates by solid-source MBE at different growth conditions often reveal regions of material exhibiting an unusual 3 fold periodicity. Such regions always seem to be associated with twins and stacking faults within the layer. We consider two different models which can match this 3-fold periodicity.
Библиографическая ссылка:
Kaiser U.
, Brown P.D.
, Chuvilin A.
, Khodos I.I.
, Fissel A.
, Richter W.
, Preston A.
, Humphreys C.J.
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
В сборнике Silicon carbide, III-nitrides and related materials : ICSCIII-N'97 : Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. 1998. – C.259-262. – ISBN 978-0-87849-790-4. DOI: 10.4028/www.scientific.net/msf.264-268.259 WOS Scopus РИНЦ
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
В сборнике Silicon carbide, III-nitrides and related materials : ICSCIII-N'97 : Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. 1998. – C.259-262. – ISBN 978-0-87849-790-4. DOI: 10.4028/www.scientific.net/msf.264-268.259 WOS Scopus РИНЦ
Даты:
Опубликована online: | 1 февр. 1998 г. |
Идентификаторы БД:
Web of science | WOS:000072751000062 |
Scopus | 2-s2.0-3743141700 |
РИНЦ | 23982498 |
Chemical Abstracts | 1998:172626 |
Chemical Abstracts (print) | 128:198835 |
OpenAlex | W1995182864 |