HfO2-High-k Dielectric for Nanoelectronics Научная публикация
Конференция |
11th International Symposium on Solid Oxide Fuel Cells and 216th ECS Meeting with EuroCVD 17 04-09 окт. 2009 , Vienna |
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Журнал |
ECS Transactions
ISSN: 1938-5862 , E-ISSN: 1938-6737 |
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Вых. Данные | Год: 2009, Том: 25, Номер: 8, Страницы: 875-880 Страниц : 6 DOI: 10.1149/1.3207680 | ||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | Сибирское отделение Российской академии наук | 97 |
Реферат:
Thermodynamic consideration of Hf-HfO2-SiO2-Si system, cross-sectional HR-TEM, XPS, IR-spectroscopy and Null ellipsometry technique were used to determine the chemical composition and structure of the HfO2 thin films deposited on Si. The interface layer consists of the hafnium silicate with smoothly varying chemical composition along the film thickness. Formation of the IL occurs as during the HfO2 film deposition so at annealing of the HfO2/SiO2/Si structure. Kinetics of the hafnium silicate formation was studied by IR-spectroscopy
Библиографическая ссылка:
Smirnova T.P.
, Kuznetsov F.A.
, Yakovkina L.
, Kaichev V.
, Kosyakov V.
, Lebedev M.
, Kichai V.
HfO2-High-k Dielectric for Nanoelectronics
ECS Transactions. 2009. V.25. N8. P.875-880. DOI: 10.1149/1.3207680 WOS Scopus РИНЦ
HfO2-High-k Dielectric for Nanoelectronics
ECS Transactions. 2009. V.25. N8. P.875-880. DOI: 10.1149/1.3207680 WOS Scopus РИНЦ
Даты:
Опубликована online: | 17 дек. 2019 г. |
Идентификаторы БД:
Web of science | WOS:000338305900111 |
Scopus | 2-s2.0-76549091892 |
РИНЦ | 15297469 |
Chemical Abstracts | 2009:1370864 |
Chemical Abstracts (print) | 153:322862 |
OpenAlex | W2263794520 |