Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface
Научная публикация
| Общее |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Конференция |
6th International Workshop on Semiconductor Surface Passivation
13-18 сент. 2009
,
Zakopane
|
| Журнал |
Applied Surface Science
ISSN: 0169-4332
|
| Вых. Данные |
Год: 2010,
Том: 256,
Номер: 19,
Страницы: 5722-5726
Страниц
: 5
DOI:
10.1016/j.apsusc.2010.03.100
|
| Ключевые слова |
Anodic oxide, InAs, Interface, Passivation, Phase composition, Surface states |
| Авторы |
Valisheva N.A.
1
,
Tereshchenko O.E.
1,2
,
Prosvirin I.P.
3
,
Levtsova T.A.
1
,
Rodjakina E.E.
1
,
Kovchavcev A.V.
1
|
| Организации |
| 1 |
Novosibirsk Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation
|
| 2 |
Novosibirsk State University, Novosibirsk 630090, Russian Federation
|
| 3 |
Boreskov Institute of Catalysis, SB RAS, Novosibirsk, 630090, Russian Federation
|
|
Информация о финансировании (2)
|
1
|
Российский фонд фундаментальных исследований
|
09-02-01045
|
|
2
|
Президиум СО РАН
|
99
|
The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As+5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface.