The Crystal Structure of Solid Solutions Formed in the HfO2-Sc2O3 Nanoscale System
Научная публикация
| Общее |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
Journal of Crystal Growth
ISSN: 0022-0248
|
| Вых. Данные |
Год: 2019,
Том: 523,
Номер статьи
: 125156,
Страниц
: 7
DOI:
10.1016/j.jcrysgro.2019.125156
|
| Ключевые слова |
A1. Characterization; A1. Nanostructures; A1. Solid solutions; A1. X-ray diffraction; B1. Alloys; B1. Rare earth compounds |
| Авторы |
Smirnova T.P.
1
,
Saraev A.A.
2
,
Korolkov I.V.
1
,
Kitchai V.N.
1
,
Borisov V.O.
1
|
| Организации |
| 1 |
Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, 630090, Russian Federation
|
| 2 |
Boreskov Institute of Catalysis SB RAS, Novosibirsk, 630090, Russian Federation
|
|
Информация о финансировании (1)
|
1
|
Российский фонд фундаментальных исследований
|
18-53-52009 (АААА-А18-118013190038-3)
|
Here we report the results of studying the crystal structure of solid solutions films, obtained in the HfO2-Sc2O3 nano-scale system using of ALD process and volatile complex compounds such as of Hf(N(C2H5)2)4 and [Sc(C5H4CH3). A number of phases, that are thermodynamically equilibrium at high temperatures (≥1500 °C), have been synthesized at T = 300 °C. The formation of disordered solid solutions with a fluorite structure and the Hf3Sc4O12 compound with an ordered rhombohedral structural type were observed at varying the scandium concentration from 2 to 30 at.%. The results obtained allowed to conclude that the synthesis temperature is not a parameter that determines the structural types of synthesized phases in the system under study. The formation and stabilization of the nonequilibrium high-temperature phases of solid solutions is initiated by oxygen vacancies, which accumulate when Hf is replaced by scandium in the HfO2 lattice. To identify the synthesized phases a set of methods has been used: XPS, X-ray diffraction, electron diffraction (SAED modes) and HR TEM. Testing metal-insulator-semiconductor (MIS) structures with a series of films under study has demonstrated conventional dynamic volt-ampere characteristics. The high leakage current was observed for all samples with the disordered cubic structure. The injection-type hysteresis without any current leakage signs has been observed at the electric field strength of 106 V/cm for structures with the ordered rhombohedral phase of Hf3Sc4O12. © 2019