Interfaces Analysis of the HfO2/SiO2/Si Structure Научная публикация
Журнал |
Journal of Physics and Chemistry of Solids
ISSN: 0022-3697 |
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Вых. Данные | Год: 2010, Том: 71, Номер: 5, Страницы: 836-840 Страниц : 5 DOI: 10.1016/j.jpcs.2010.02.010 | ||||||||
Ключевые слова | Chemical properties; Chemical vapor deposition; Hafnium; Silicates; Silicon; Silicon oxides; Spacecraft instruments; Synthesis (chemical); Thin films; X ray photoelectron spectroscopy | ||||||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | Сибирское отделение Российской академии наук | 97 |
Реферат:
The physical and chemical properties of the HfO2/SiO2/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO2 films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium—Hf(dpm)4 and dicyclopentadienil-hafnium-bis-diethylamide—Сp2Hf(N(C2H5)2)2.
The amorphous interface layer (IL) between HfO2 and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO2 synthesis, and at the annealing of the HfO2/SiO2/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO2/SiO2 interface, and its chemical structure depends on the thickness of the SiO2 underlayer.
Библиографическая ссылка:
Smirnova T.P.
, Yakovkina L.V.
, Beloshapkin S.A.
, Kaichev V.V.
, Alferova N.I.
, Jeong-Hwan S.
Interfaces Analysis of the HfO2/SiO2/Si Structure
Journal of Physics and Chemistry of Solids. 2010. V.71. N5. P.836-840. DOI: 10.1016/j.jpcs.2010.02.010 WOS Scopus РИНЦ
Interfaces Analysis of the HfO2/SiO2/Si Structure
Journal of Physics and Chemistry of Solids. 2010. V.71. N5. P.836-840. DOI: 10.1016/j.jpcs.2010.02.010 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 20 мая 2009 г. |
Принята к публикации: | 18 февр. 2010 г. |
Опубликована online: | 4 мар. 2010 г. |
Опубликована в печати: | 1 мая 2010 г. |
Идентификаторы БД:
Web of science | WOS:000277548000021 |
Scopus | 2-s2.0-77950337811 |
РИНЦ | 15315361 |
Chemical Abstracts | 2010:450758 |
Chemical Abstracts (print) | 154:501204 |
OpenAlex | W2018378182 |