Effect of Sn for the Dislocation-free SiSn Nanostructure Formation on the Vapor-Liquid-Crystal Mechanism
Научная публикация
| Общая информация |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
AIP Advances
ISSN: 2158-3226
|
| Вых. Данные |
Год: 2020,
Том: 10,
Номер: 1,
Номер статьи
: 015309,
Страниц
: 7
DOI:
10.1063/1.5139936
|
| Авторы |
Timofeev Vyacheslav
1
,
Mashanov Vladimir
1
,
Nikiforov Alexander
1,2
,
Skvortsov Ilya
1,3
,
Gavrilova Tatyana
1
,
Gulyaev Dmitry
1
,
Gutakovskii Anton
1,3
,
Chetyrin Igor
4
|
| Организации |
| 1 |
Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia
|
| 2 |
National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia
|
| 3 |
Novosibirsk State University, 1 Pirogov Str., Novosibirsk 630090, Russia
|
| 4 |
Boreskov Institute of Catalysis SB RAS, 5 Lavrentyev Avenue, Novosibirsk 630090, Russia
|
|
Информация о финансировании (5)
|
1
|
Российский научный фонд
|
18-72-00090
|
|
2
|
Российский фонд фундаментальных исследований
|
18-32-20064 (АААА-А19-119090490028-1)
|
|
3
|
Российский фонд фундаментальных исследований
|
18-42-540018
|
|
4
|
Российский фонд фундаментальных исследований
|
18-52-41006 (АААА-А18-118060490033-9)
|
|
5
|
Российский научный фонд
|
19-72-30023
|
Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm. © 2020 Author(s).