Phonon-Assisted Electron Tunneling between Traps in Silicon Oxide Films Treated in Hydrogen Plasma Научная публикация
Журнал |
Journal of Non-Crystalline Solids
ISSN: 0022-3093 , E-ISSN: 1873-4812 |
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Вых. Данные | Год: 2020, Том: 546, Номер статьи : 120256, Страниц : 5 DOI: 10.1016/j.jnoncrysol.2020.120256 | ||||||
Ключевые слова | DEFECTS; MODEL; MECHANISMS; CONDUCTION; CENTERS; SIO2 | ||||||
Авторы |
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Организации |
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Информация о финансировании (2)
1 | Российский научный фонд | 19-19-00286 (АААА-А19-119120490056-8) |
2 | Министерство науки и высшего образования Российской Федерации | 0306-2019-0015 |
Реферат:
The charge transport in thin thermal silicon oxide films treated in electron cyclotron resonance hydrogen plasma at different exposure times was investigated. X-ray photoelectron studies show that such treatment leads to the oxygen deficiency of the films. It was established that the treatment of the films in plasma leads to an increase of their conductivity by a factor of about 102. The film charge transport properties were studied at different temperatures and analyzed within four theoretical dielectric conductivity models. It was found that the charge transport mechanism is described by Fowler-Nordheim model in the initial silicon oxide and by the model of phonon-assisted electron tunneling between neutral traps after the treatment in hydrogen plasma. The thermal trap ionization energy value (Wt = 1.6 eV) measured from transport experiments is in agreement with that obtained from ab initio calculations for the oxygen vacancy (Si-Si bond) in SiO2.
Библиографическая ссылка:
Voronkovskii V.A.
, Perevalov T.V.
, Iskhakzay R.M.H.
, Aliev V.S.
, Gritsenko V.A.
, Prosvirin I.P.
Phonon-Assisted Electron Tunneling between Traps in Silicon Oxide Films Treated in Hydrogen Plasma
Journal of Non-Crystalline Solids. 2020. V.546. 120256 :1-5. DOI: 10.1016/j.jnoncrysol.2020.120256 WOS Scopus РИНЦ
Phonon-Assisted Electron Tunneling between Traps in Silicon Oxide Films Treated in Hydrogen Plasma
Journal of Non-Crystalline Solids. 2020. V.546. 120256 :1-5. DOI: 10.1016/j.jnoncrysol.2020.120256 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 5 мар. 2020 г. |
Принята к публикации: | 17 июн. 2020 г. |
Опубликована online: | 7 июл. 2020 г. |
Опубликована в печати: | 15 окт. 2020 г. |
Идентификаторы БД:
Web of science | WOS:000567816600005 |
Scopus | 2-s2.0-85087516150 |
РИНЦ | 45490589 |
Chemical Abstracts | 2020:1334891 |
OpenAlex | W3040962601 |