Influence of the Active TaN/ZrOx/Ni Memristor Layer Oxygen Content on Forming and Resistive Switching Behavior Научная публикация
Журнал |
Nanotechnology
ISSN: 0957-4484 , E-ISSN: 1361-6528 |
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Вых. Данные | Год: 2021, Том: 32, Номер: 18, Номер статьи : 185205, Страниц : 19 DOI: 10.1088/1361-6528/abce7b | ||||||
Ключевые слова | zirconium oxide, forming-free, memristor, ReRAM, SCLC, XPS | ||||||
Авторы |
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Организации |
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Информация о финансировании (2)
1 | Российский научный фонд | 16-19-00002 |
2 | Министерство науки и высшего образования Российской Федерации | 0242-2019-0002 |
Реферат:
The influence of oxygen content in active zirconium oxide layers on the electrophysical properties of TaN/ZrOx/Ni memristors is investigated. The [O]/[Zr] atomic ratio (x) in the oxide layers was varied in the range from 1.56 to 2.0 by changing the partial oxygen pressure during their deposition by ion-beam sputtering deposition. The ZrOx film compositions were analyzed using X-ray photoelectron spectroscopy and density functional theory simulations. The multiple resistive switching phenomenon in TaN/ZrOx/Ni memristors was found to occur in a certain range of x ≥ 1.78. With the x value decreasing in the oxide layers, the forming voltage of memristors decreased. Furthermore, at the lower edge of x values the switchable range, they no longer required forming. At the same time, as the x value decreased, the memory window (ION/IOFF ratio) also decreased from 5 to 1 order of magnitude due to an increase in the memristor conductivity in the high resistance state. In order to identify the underlying conduction mechanism of TaN/ZrOx/Ni memristors, their current-voltage curves in low and high resistance states were analyzed in the temperature range from 250 to 400 K for the samples with x = 1.78 (forming-free) and 1.97 (which required forming). It was found that, for both samples, the conductivity in the low-resistance state is characterized by the trap-free space-charge-limited current (SCLC) model, whereas the conductivity in the high-resistance state is characterized by the trap-mediated SCLC model. The possible origins of structural defects involved in the memristor conductivity and resistive switching are discussed based on the obtained results.
Библиографическая ссылка:
Voronkovskii V.A.
, Aliev V.S.
, Gerasimova A.K.
, Perevalov T.V.
, Prosvirin I.P.
, Islamov D.R.
Influence of the Active TaN/ZrOx/Ni Memristor Layer Oxygen Content on Forming and Resistive Switching Behavior
Nanotechnology. 2021. V.32. N18. 185205 :1-19. DOI: 10.1088/1361-6528/abce7b WOS Scopus РИНЦ
Influence of the Active TaN/ZrOx/Ni Memristor Layer Oxygen Content on Forming and Resistive Switching Behavior
Nanotechnology. 2021. V.32. N18. 185205 :1-19. DOI: 10.1088/1361-6528/abce7b WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 8 сент. 2020 г. |
Принята к публикации: | 27 нояб. 2020 г. |
Опубликована online: | 27 нояб. 2020 г. |
Опубликована в печати: | 12 февр. 2021 г. |
Идентификаторы БД:
Web of science | WOS:000620497800001 |
Scopus | 2-s2.0-85102711733 |
РИНЦ | 46782930 |
Chemical Abstracts | 2021:725313 |
OpenAlex | W3109106512 |