Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films
Научная публикация
| Общая информация |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
Materials Research Express
, E-ISSN: 2053-1591
|
| Вых. Данные |
Год: 2020,
Том: 7,
Номер: 12,
Номер статьи
: 125903,
Страниц
: 11
DOI:
10.1088/2053-1591/abd06b
|
| Ключевые слова |
Silicon; In2O3; Er; thin films; nanowires; photoluminescence; band offset; thermionic emission; > |
| Авторы |
Feklistov K V
1,6
,
Lemzyakov A G
2
,
Prosvirin I P
3
,
Gismatulin A A
1,5
,
Shklyaev A A
1,5
,
Zhivodkov Y A
1
,
Krivyakin G К
1,5
,
Komonov A I
1
,
Kozhukhov АS
1,5
,
Spesivsev E V
1
,
Gulyaev D V
1
,
Abramkin D S
1,5
,
Pugachev A M
4
,
Esaev D G
1
,
Sidorov G Yu
1
|
| Организации |
| 1 |
Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia
|
| 2 |
Budker Institute of Nuclear Physics SB RAS, 630090, Novosibirsk, Russia
|
| 3 |
Boreskov Institute of Catalysis SB RAS, 630090, Novosibirsk, Russia
|
| 4 |
Institute of Automation and Electrometry SB RAS, 630090, Novosibirsk, Russia
|
| 5 |
Novosibirsk State University, 630090, Novosibirsk, Russia
|
| 6 |
Academ Infrared LLC, 630090, Novosibirsk, Russia
|
|
Информация о финансировании (3)
|
1
|
Министерство науки и высшего образования Российской Федерации
|
0306-2019-0005
|
|
2
|
Министерство науки и высшего образования Российской Федерации
|
075-15-2020-797 (13.1902.21.0024)
|
|
3
|
Федеральное агентство научных организаций России
|
007-03-599 (АААА-А17-117052410033-9)
|
RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 mu m Er3+ room temperature photoluminescence. The current across the film flows inside the columns through the nanowires. The current through the MOS-structure with the intermediate low barrier In2O3:Er dielectric was investigated by the thermionic emission approach, with respect to the partial voltage drop in silicon. Schottky plots ln(I/T-2) versus 1/kT of forward currents at small biases and backward currents in saturation give the electron forward n-Si\In2O3:Er barrier equal to 0.14 eV and the backward In\In2O3:Er barrier equal to 0.21 eV.