Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films | Sciact - CRIS-система Института катализа

Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films Научная публикация

Журнал

Materials Research Express
, E-ISSN: 2053-1591

Вых. Данные

Год: 2020, Том: 7, Номер: 12, Номер статьи : 125903, Страниц : 11 DOI: 10.1088/2053-1591/abd06b

Ключевые слова

Silicon; In2O3; Er; thin films; nanowires; photoluminescence; band offset; thermionic emission; >

Авторы

Feklistov K V ^1,6 , Lemzyakov A G ² , Prosvirin I P ³ , Gismatulin A A ^1,5 , Shklyaev A A ^1,5 , Zhivodkov Y A ¹ , Krivyakin G К ^1,5 , Komonov A I ¹ , Kozhukhov АS ^1,5 , Spesivsev E V ¹ , Gulyaev D V ¹ , Abramkin D S ^1,5 , Pugachev A M ⁴ , Esaev D G ¹ , Sidorov G Yu ¹

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, Russia
2	Budker Institute of Nuclear Physics SB RAS, 630090, Novosibirsk, Russia
3	Boreskov Institute of Catalysis SB RAS, 630090, Novosibirsk, Russia
4	Institute of Automation and Electrometry SB RAS, 630090, Novosibirsk, Russia
5	Novosibirsk State University, 630090, Novosibirsk, Russia
6	Academ Infrared LLC, 630090, Novosibirsk, Russia

Информация о финансировании (3)

1	Министерство науки и высшего образования Российской Федерации	0306-2019-0005
2	Министерство науки и высшего образования Российской Федерации	075-15-2020-797 (13.1902.21.0024)
3	Федеральное агентство научных организаций России	007-03-599 (АААА-А17-117052410033-9)

RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 mu m Er3+ room temperature photoluminescence. The current across the film flows inside the columns through the nanowires. The current through the MOS-structure with the intermediate low barrier In2O3:Er dielectric was investigated by the thermionic emission approach, with respect to the partial voltage drop in silicon. Schottky plots ln(I/T-2) versus 1/kT of forward currents at small biases and backward currents in saturation give the electron forward n-Si\In2O3:Er barrier equal to 0.14 eV and the backward In\In2O3:Er barrier equal to 0.21 eV.

Feklistov K.V. , Lemzyakov A.G. , Prosvirin I.P. , Gismatulin A.A. , Shklyaev A.A. , Zhivodkov Y.A. , Krivyakin G.К. , Komonov A.I. , Kozhukhov А. , Spesivsev E.V. , Gulyaev D.V. , Abramkin D.S. , Pugachev A.M. , Esaev D.G. , Sidorov G.Y.
Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films

Materials Research Express. 2020. V.7. N12. 125903 :1-11. DOI: 10.1088/2053-1591/abd06b WOS Scopus РИНЦ

Полный текст от издателя

Поступила в редакцию:	24 окт. 2020 г.
Принята к публикации:	3 дек. 2020 г.
Опубликована online:	16 дек. 2020 г.

Web of science	WOS:000599483800001
Scopus	2-s2.0-85098750392
РИНЦ	45035535
Chemical Abstracts	2021:390496