Advanced Passivation Techniques for Si Solar Cells with High-κ Dielectric Materials Научная публикация
Журнал |
Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118 |
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Вых. Данные | Год: 2014, Том: 105, Номер: 12, Страницы: 123905 Страниц : 5 DOI: 10.1063/1.4896619 | ||||||||||
Ключевые слова | SURFACE RECOMBINATION; SILICON; CHEMISTRY; FILMS | ||||||||||
Авторы |
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Организации |
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Информация о финансировании (4)
1 | Сибирское отделение Российской академии наук | 9 |
2 | National Natural Science Foundation of China | 61274051 |
3 | Ministry of Economic Affairs | 102-EC-17-A-13-S1-173 |
4 | Ministry of Science and Technology of the People's Republic of China | 863, No. 2011AA050504 |
Реферат:
Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2O3, HfO2) and their compounds H(Hf)A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al2O3 film has been found to provide negative fixed charge (−6.4 × 1011 cm−2), whereas HfO2 film provides positive fixed charge (3.2 × 1012 cm−2). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO2 film would provide better passivation properties than that of the ALD-Al2O3 film in this research work.
Библиографическая ссылка:
Geng H.
, Lin T.
, Letha A.J.
, Hwang H-L.
, Kyznetsov F.A.
, Smirnova T.P.
, Saraev A.A.
, Kaichev V.V.
Advanced Passivation Techniques for Si Solar Cells with High-κ Dielectric Materials
Applied Physics Letters. 2014. V.105. N12. P.123905. DOI: 10.1063/1.4896619 WOS Scopus РИНЦ
Advanced Passivation Techniques for Si Solar Cells with High-κ Dielectric Materials
Applied Physics Letters. 2014. V.105. N12. P.123905. DOI: 10.1063/1.4896619 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 28 июл. 2014 г. |
Принята к публикации: | 15 сент. 2014 г. |
Опубликована в печати: | 22 сент. 2014 г. |
Опубликована online: | 25 сент. 2014 г. |
Идентификаторы БД:
Web of science | WOS:000343004400097 |
Scopus | 2-s2.0-84907481924 |
РИНЦ | 23991014 |
Chemical Abstracts | 2014:1611916 |
Chemical Abstracts (print) | 161:553147 |
OpenAlex | W2073699396 |