Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers Научная публикация
Журнал |
Journal of Applied Physics
ISSN: 0021-8979 , E-ISSN: 1089-7550 |
||||||
---|---|---|---|---|---|---|---|
Вых. Данные | Год: 2022, Том: 131, Номер: 8, Номер статьи : 085301, Страниц : 9 DOI: 10.1063/5.0078405 | ||||||
Ключевые слова | Alumina; Aluminum oxide; Anodic oxidation; Fluorine; Interface states; Passivation | ||||||
Авторы |
|
||||||
Организации |
|
Информация о финансировании (1)
1 | Российский фонд фундаментальных исследований | 20-02-00516 (АААА-А20-120032590012-5) |
Реферат:
The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3-4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV-1 cm-2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C. © 2022 Author(s).
Библиографическая ссылка:
Aksenov M.S.
, Valisheva N.A.
, Gorshkov D.V.
, Sidorov G.Y.
, Prosvirin I.P.
, Gutakovskii A.K.
Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers
Journal of Applied Physics. 2022. V.131. N8. 085301 :1-9. DOI: 10.1063/5.0078405 WOS Scopus РИНЦ
Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers
Journal of Applied Physics. 2022. V.131. N8. 085301 :1-9. DOI: 10.1063/5.0078405 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 12 нояб. 2021 г. |
Принята к публикации: | 7 февр. 2022 г. |
Опубликована online: | 23 февр. 2022 г. |
Опубликована в печати: | 28 февр. 2022 г. |
Идентификаторы БД:
Web of science | WOS:000761052700001 |
Scopus | 2-s2.0-85125568855 |
РИНЦ | 48187830 |
Chemical Abstracts | 2022:490805 |
Chemical Abstracts (print) | 178:305180 |
OpenAlex | W4212830595 |
Цитирование в БД:
БД | Цитирований |
---|---|
OpenAlex | 1 |