MOCVD Growth and Study of Magnetic Co Films
Научная публикация
| Общее |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
Surface Engineering
ISSN: 0267-0844
, E-ISSN: 1743-2944
|
| Вых. Данные |
Год: 2016,
Том: 32,
Номер: 1,
Страницы: 8-14
Страниц
: 7
DOI:
10.1179/1743294414Y.0000000424
|
| Ключевые слова |
Co films, Co precursor, Magnetic characteristics, MOCVD, Vapour pressure |
| Авторы |
Dorovskikh S.I.
1
,
Hairullin R.R.
2,3
,
Sysoev S.V.
1
,
Kriventsov V.V.
4
,
Panin A.V.
2
,
Shubin Y.V.
1,5
,
Morozova N.B.
1
,
Gelfond N.V.
1
,
Korenev S.V.
1,5
|
| Организации |
| 1 |
Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, aven. Lavrentiev 3, Novosibirsk 630090, Russia
|
| 2 |
Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Science, 2/1 Akademicheskii pr., Tomsk 634021,
Russia
|
| 3 |
National Research Tomsk Polytechnic University, 30 Lenina av., Tomsk 634050, Russia
|
| 4 |
Boreskov Institute of Catalysis, Siberian Branch of Russian Academy ofSciences, aven. Lavrentiev 5, Novosibirsk 630090, Russia
|
| 5 |
Novosibirsk State University, Pirogova Str. 2, Novosibirsk 630090, Russia
|
|
Информация о финансировании (1)
|
1
|
Министерство образования и науки Российской Федерации
|
14.604.21.0080
|
The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°) = 26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.