Enhanced Reflectance X-Ray Absorption Fine Structure Sensitivity Using a Whispering-Gallery Waveguide
Научная публикация
| Общая информация |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Конференция |
XII National Synchrotron Radiation Conference
13-18 июл. 1998
,
Новосибирск
|
| Журнал |
Nuclear Instruments and Methods in Physics Research Section A
ISSN: 0168-9002
|
| Вых. Данные |
Год: 2000,
Том: 448,
Номер: 1-2,
Страницы: 173-178
Страниц
: 6
DOI:
10.1016/S0168-9002(00)00216-3
|
| Авторы |
Chernov V.A.
1,2
,
Kim S.K.
3
,
Kovalenko N.V.
4
,
Zolotarev K.V.
4,5
|
| Организации |
| 1 |
Siberian SR Center at Budker INP, Institute of Nuclear Physics, 11 Lavrentyev Avenue, 630090 Novosibirsk, Russia
|
| 2 |
Boreskov Institute of Catalysis, 630090 Novosibirsk, Russia
|
| 3 |
Materials Science Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720, USA
|
| 4 |
Budker Institute of Nuclear Physics, 630090 Novosibirsk, Russia
|
| 5 |
New Industry Research Organization, 1-5-2, Minatojima-minamimachi, Chuo-ku, Kobe 650-0047, Japan
|
|
Информация о финансировании (1)
|
1
|
Российский фонд фундаментальных исследований
|
97-02-18454
|
A new technique of reflectance X-ray absorption fine structure (REFL-XAFS) utilizing waveguides where X-rays are reflected many times along the waveguide surface is discussed. The multiple total reflection (MTR) phenomenon highly increases X-ray interaction with the waveguide surface and hence offers higher sensitivity compared to conventional (single reflection) REFL-XAFS. On the one hand, this technique is a direct structural method for characterizing waveguides (e.g. capillaries) where the application of other methods is very difficult. On the other hand, the conventional thin wafer can be transformed to a whispering-gallery (WG) waveguide by bending to a curved mirror. Ray tracing calculations demonstrate that the WG waveguide is very suitable for REFL-XAFS measurements. This method was experimentally realized for a cylindrically bent silica wafer with the surface covered with a GeO2 monolayer. The Ge K-edge REFL-XAFS measurements were performed using both MTR and conventional techniques. The MTR technique allows us to achieve about 20-fold gain in the signal-to-background ratio compared with the conventional technique. The MTR phenomenon discussed in this paper can provide new possibilities to study clean surfaces, ultrathin films and adsorbed molecules.