Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM Научная публикация
Конференция |
19th Conference on “Insulating Films on Semiconductors” 29 июн. - 2 июл. 2015 , Udine |
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Журнал |
Microelectronic Engineering
ISSN: 0167-9317 , E-ISSN: 1873-5568 |
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Вых. Данные | Год: 2015, Том: 147, Страницы: 165-167 Страниц : 3 DOI: 10.1016/j.mee.2015.04.091 | ||||||||||
Ключевые слова | Hafnium sub-oxides, Nanoscale fluctuations, Percolation, Resistive memory | ||||||||||
Авторы |
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Организации |
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Информация о финансировании (3)
1 | Российский научный фонд | 14-19-00192 |
2 | Министерство образования и науки Российской Федерации | |
3 | Ministry of Science and Technology | NSC103-2923-E-009-002-MY3 |
Реферат:
We study the structure of non-stoichiometric HfO x films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry.•HfOx,to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (~10-15%) of HfOy (y<2).•Spatial potential fluctuations of chemical composition lead to fluctuations of the band gap in HfOx .•Transport in HfO x is described by Efros-Shklovskii percolation theory.•We propose that HfOx -based RRAM in low resistance state has the same structure.
Библиографическая ссылка:
Kruchinin V.N.
, Aliev V.S.
, Perevalov T.V.
, Islamov D.R.
, Gritsenko V.A.
, Prosvirin I.P.
, Cheng C.H.
, Chin A.
Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM
Microelectronic Engineering. 2015. V.147. P.165-167. DOI: 10.1016/j.mee.2015.04.091 WOS Scopus РИНЦ
Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM
Microelectronic Engineering. 2015. V.147. P.165-167. DOI: 10.1016/j.mee.2015.04.091 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 9 февр. 2015 г. |
Принята к публикации: | 7 апр. 2015 г. |
Опубликована online: | 22 апр. 2015 г. |
Опубликована в печати: | 1 нояб. 2015 г. |
Идентификаторы БД:
Web of science | WOS:000362308000040 |
Scopus | 2-s2.0-84928953324 |
РИНЦ | 24028275 |
Chemical Abstracts | 2015:710806 |
OpenAlex | W2046993313 |