Preparation and Properties of Thin HfO2 Films Научная публикация
Журнал |
Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
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Вых. Данные | Год: 2005, Том: 41, Номер: 12, Страницы: 1300-1304 Страниц : 5 DOI: 10.1007/s10789-005-0305-8 | ||||
Ключевые слова | CHEMICAL-VAPOR-DEPOSITION; ATOMIC-LAYER DEPOSITION; HAFNIUM OXIDE; Si; TEMPERATURE; INTERFACE; PRECURSOR; STABILITY; Si(100); OXYGEN | ||||
Авторы |
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Организации |
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Реферат:
HfO2 layers were grown on silicon by metalorganic chemical vapor deposition using (C5H5)2Hf(CH3)2, (C5H5)2Hf(N(C2H5)2)2, and Hf(dpm)4 as volatile precursors and were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, and IR spectroscopy. The films were shown to consist of monoclinic HfO2 and to contain hafnium silicide and silicate at the HfO2/Si interface. The presence of hafnium silicide was attributed to oxygen deficiency produced by argon ion milling. Hafnium silicate was formed as a result of the reaction between hafnium and silicon oxides during annealing. Current-voltage and capacitance-voltage measurements on Al/HfO2/Si test structures were used to determine the dielectric permittivity and electrical resistivity of the films: ɛ = 15–20, ρ ∼ 1015 cm.
Библиографическая ссылка:
Yakovkina L.V.
, Kichai V.N.
, Smirnova T.P.
, Kaichev V.V.
, Shubin Y.V.
, Morozova N.B.
, Zherikova K.V.
, Igumenov I.K.
Preparation and Properties of Thin HfO2 Films
Inorganic Materials. 2005. V.41. N12. P.1300-1304. DOI: 10.1007/s10789-005-0305-8 WOS Scopus РИНЦ
Preparation and Properties of Thin HfO2 Films
Inorganic Materials. 2005. V.41. N12. P.1300-1304. DOI: 10.1007/s10789-005-0305-8 WOS Scopus РИНЦ
Оригинальная:
Яковкина Л.В.
, Кичай В.Н.
, Смирнова Т.П.
, Каичев В.В.
, Шубин Ю.В.
, Морозова Н.Б.
, Жерикова К.В.
, Игуменов И.К.
Получение и свойства тонких пленок HfO2
Неорганические материалы. 2005. Т.41. №12. С.1474-1479. RSCI РИНЦ
Получение и свойства тонких пленок HfO2
Неорганические материалы. 2005. Т.41. №12. С.1474-1479. RSCI РИНЦ
Даты:
Поступила в редакцию: | 23 мар. 2005 г. |
Опубликована в печати: | 1 дек. 2005 г. |
Идентификаторы БД:
Web of science | WOS:000234154800011 |
Scopus | 2-s2.0-29144490594 |
РИНЦ | 13477320 |
Chemical Abstracts | 2005:1321974 |
Chemical Abstracts (print) | 145:93995 |
OpenAlex | W2323650135 |