1
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Mironova M.I.
, Kapishnikov A.V.
, Hamoud G.A.
, Volodin V.A.
, Azarov I.A.
, Yushkov I.D.
, Kamaev G.N.
, Suprun E.A.
, Chirikov N.A.
, Davletkildeev N.A.
, Baidakov A.N.
, Kovivchak V.S.
, Baranova L.V.
, Strunin V.I.
, Geydt P.V.
Characterization of Structure, Morphology, Optical and Electrical Properties of AlN–Al–V Multilayer Thin Films Fabricated by Reactive DC Magnetron Sputtering
Coatings. 2023.
V.13. N2. 223
:1-22. DOI: 10.3390/coatings13020223
WOS
Scopus
РИНЦ
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2
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Yushkov I.D.
, Yin L.
, Kamaev G.N.
, Prosvirin I.P.
, Geydt P.V.
, Vergnat M.
, Volodin V.A.
Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films
Electronics. 2023.
V.12. N4. 873
:1-14. DOI: 10.3390/electronics12040873
WOS
Scopus
РИНЦ
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3
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Володин В.А.
, Камаев Г.Н.
, Гриценко В.А.
, Черкова С.Г.
, Просвирин И.П.
Состав и оптические свойства аморфного плазмохимического оксинитрида кремния переменного состава a-SiOxNy : H
Журнал технической физики. 2023.
Т.93. №4. С.575-582. DOI: 10.21883/jtf.2023.04.55047.167-22
РИНЦ
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4
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Novikov Y.N.
, Kamaev G.N.
, Prosvirin I.P.
, Gritsenko V.A.
Memory Properties and Short-Range Order in Silicon Oxynitride-Based Memristors
Applied Physics Letters. 2023.
V.122. 232903
:1-5. DOI: 10.1063/5.0151211
WOS
Scopus
РИНЦ
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5
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Volodin V.A.
, Kamaev G.N.
, Gritsenko V.A.
, Chepkova S.G.
, Prosvirin I.P.
Composition and Optical Properties of Amorphous Plasma-Chemical Silicon Oxynitride of Variable Composition α-SiOxNy : H
Technical Physics. 2023.
V.68. N4. P.538-545. DOI: 10.21883/tp.2023.04.55947.167-22
РИНЦ
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6
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Rybak A.A.
, Yushkov I.D.
, Nikolaev N.A.
, Kapishnikov A.V.
, Volodin A.M.
, Krivyakin G.K.
, Kamaev G.N.
, Geydt P.V.
Electrophysical Properties of Polycrystalline C12A7:e− Electride
Electronics. 2022.
V.11. N4. 668
:1-13. DOI: 10.3390/electronics11040668
WOS
Scopus
РИНЦ
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7
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Zhang F.
, Volodin V.A.
, Astankova K.N.
, Kamaev G.N.
, Azarov I.A.
, Prosvirin I.P.
, Vergnat M.
Determination of the Infrared Absorption Cross-Section of the Stretching Vibrations of Ge–O Bonds in GeOx Films
Results in Chemistry. 2022.
V.4. 100461
:1-5. DOI: 10.1016/j.rechem.2022.100461
Scopus
РИНЦ
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8
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Perevalov T.V.
, Volodin V.A.
, Kamaev G.N.
, Gismatulin A.A.
, Cherkova S.G.
, Prosvirin I.P.
, Astankova K.N.
, Gritsenko V.A.
Electronic Structure of Silicon Oxynitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition for Memristor Application
Journal of Non-Crystalline Solids. 2022.
V.598. 121925
:1-8. DOI: 10.1016/j.jnoncrysol.2022.121925
WOS
Scopus
РИНЦ
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9
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Yushkov I.D.
, Kamaev G.N.
, Volodin V.A.
, Geydt P.V.
, Kapishnikov A.V.
, Volodin A.M.
Resistance Switching in Polycrystalline C12A7 Electride
Micromachines. 2022.
V.13. N11. 1917
:1-14. DOI: 10.3390/mi13111917
WOS
Scopus
РИНЦ
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10
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Perevalov T.V.
, Volodin V.A.
, Kamaev G.N.
, Krivyakin G.K.
, Gritsenko V.A.
, Prosvirin I.P.
Electronic Structure and Nanoscale Potential Fluctuations in Strongly Nonstoichiometric PECVD SiOx
Journal of Non-Crystalline Solids. 2020.
V.529. 119796
:1-4. DOI: 10.1016/j.jnoncrysol.2019.119796
WOS
Scopus
РИНЦ
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11
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Gismatulin A.A.
, Voronkovskii V.A.
, Kamaev G.N.
, Novikov Y.N.
, Kruchinin V.N.
, Krivyakin G.K.
, Gritsenko V.A.
, Prosvirin I.P.
, Chin A.
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020.
V.31. N50. 505704
:1-10. DOI: 10.1088/1361-6528/abb505
WOS
Scopus
РИНЦ
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12
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Volodin V.A.
, Geydt P.
, Kamaev G.N.
, Gismatulin A.A.
, Krivyakin G.K.
, Prosvirin I.P.
, Azarov I.A.
, Fan Z.F.
, Vergnat M.
Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters
Electronics. 2020.
V.9. N12. 2103
:1-17. DOI: 10.3390/electronics9122103
WOS
Scopus
РИНЦ
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13
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Perevalov T.V.
, Volodin V.A.
, Novikov Y.N.
, Kamaev G.N.
, Gritsenko V.A.
, Prosvirin I.P.
Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition
Physics of the Solid State. 2019.
V.61. N12. P.2560-2568. DOI: 10.1134/s1063783419120370
WOS
РИНЦ
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14
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Перевалов Т.В.
, Володин В.А.
, Новиков Ю.Н.
, Камаев Г.Н.
, Гриценко В.А.
, Просвирин И.П.
Наноразмерные флуктуации потенциала в SiOx, синтезированном плазмохимическим осаждением
Физика твердого тела. 2019.
Т.61. №12. С.2528–2535. DOI: 10.21883/FTT.2019.12.48589.552
РИНЦ
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