1
|
Aksenov M.S.
, Valisheva N.A.
, Gorshkov D.V.
, Sidorov G.Y.
, Prosvirin I.P.
, Gutakovskii A.K.
Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers
Journal of Applied Physics. 2022.
V.131. N8. 085301
:1-9. DOI: 10.1063/5.0078405
WOS
Scopus
РИНЦ
|
2
|
Aksenov M.S.
, Gutakovskii A.K.
, Prosvirin I.P.
, Dmitriev D.V.
, Nedomolkina A.A.
, Valisheva N.A.
Anodic Layer Formation on the InAlAs Surface in Townsend Gas-Discharge Plasma
Materials Science in Semiconductor Processing. 2019.
V.102. 104611
:1-5. DOI: 10.1016/j.mssp.2019.104611
WOS
Scopus
РИНЦ
|
3
|
Chistokhin I.B.
, Aksenov M.S.
, Valisheva N.A.
, Dmitriev D.V.
, Kovchavtsev A.P.
, Gutakovskii A.K.
, Prosvirin I.P.
, Zhuravlev K.S.
Barrier Characteristics and Interface Properties of Au/Ti/n-InAlAs Schottky Contacts
Materials Science in Semiconductor Processing. 2018.
V.74. P.193-198. DOI: 10.1016/j.mssp.2017.10.014
WOS
Scopus
РИНЦ
|
4
|
Kovchavtsev A.P.
, Aksenov M.S.
, Tsarenko A.V.
, Nastovjak A.E.
, Pogosov A.G.
, Pokhabov D.A.
, Tereshchenko O.E.
, Valisheva N.A.
Influence of Quantizing Magnetic Field and Rashba Effect on Indium Arsenide Metal-Oxide-Semiconductor Structure Accumulation Capacitance
Journal of Applied Physics. 2018.
V.123. N17. 173901
:1-7. DOI: 10.1063/1.5018670
Scopus
|
5
|
Аксенов М.С.
, Валишева Н.А.
, Левцова Т.А.
, Чистохин И.Б.
, Просвирин И.П.
, Кожухов А.С.
, Дмитриев Д.В.
, Торопов А.И.
, Гилинский А.М.
, Журавлев К.С.
Формирование барьера Шоттки СВЧ фотодиодов на основе InAlAs/InGaAs/InP гетероструктур
В сборнике
26-Я Международная крымская конференция "СВЧ-техника и телекоммуникационные технологии" (КРЫМИКО'2016) Материалы конференции. В 13 томах. Том. 10. 8. Прикладные аспекты СВЧ-техники и фотоники.
2016.
– C.2400-2404. – ISBN 9789663354286.
РИНЦ
|
6
|
Aksenov M.S.
, Kokhanovskii A.Y.
, Polovodov P.A.
, Devyatova S.F.
, Golyashov V.A.
, Kozhukhov A.S.
, Prosvirin I.P.
, Khandarkhaeva S.E.
, Gutakovskii A.K.
, Valisheva N.A.
, Tereshсhenko O.E.
InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge
Applied Physics Letters. 2015.
V.107. N17. 173501
:1-5. DOI: 10.1063/1.4934745
WOS
Scopus
РИНЦ
|
7
|
Tereshchenko O.E.
, Golyashov V.A.
, Eremeev S.V.
, Maurin I.
, Bakulin A.V.
, Kulkova S.E.
, Aksenov M.S.
, Preobrazhenskii V.V.
, Putyato M.A.
, Semyagin B.R.
, Dmitriev D.V.
, Toropov A.I.
, Gutakovskii A.K.
, Khandarkhaeva S.E.
, Prosvirin I.P.
, Kalinkin A.V.
, Bukhtiyarov V.I.
, Latyshev A.V.
Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications
Applied Physics Letters. 2015.
V.107. 123506
:1-5. DOI: 10.1063/1.4931944
WOS
Scopus
РИНЦ
|
8
|
Valisheva N.A.
, Aksenov M.S.
, Golyashov V.A.
, Levtsova T.A.
, Kovchavtsev A.P.
, Gutakovskii A.K.
, Khandarkhaeva S.E.
, Kalinkin A.V.
, Prosvirin I.P.
, Bukhtiyarov V.I.
, Tereshchenko O.E.
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014.
V.105. P.161601-161605. DOI: 10.1063/1.4899137
WOS
Scopus
РИНЦ
|
9
|
Golyashov V.A.
, Aksenov M.S.
, Valisheva N.A.
, Prosvirin I.P.
, Kalinkin A.V.
, Preobrazhensky V.V.
, Putyato M.A.
, Semyagin B.R.
, Tereshhenko O.E.
Formation of HfO2/GaAs(001) Interface with Si Interlayer
В сборнике
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.
2011.
– C.34-36. DOI: 10.1109/EDM.2011.6006887
Scopus
РИНЦ
|