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1
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Gorshkov D.V.
,
Zakirov E.R.
,
Sidorov G.Y.
,
Sabinina I.V.
,
Marin D.V.
,
Ikusov D.G.
,
Yakushev M.V.
,
Golyashov V.A.
,
Tereshchenko O.E.
Study of MIS Structures Based on CdHgTe and HfO2 Applied by PEALD
Applied Physics Letters. 2022.
V.121. N8. 081602
:1-5. DOI: 10.1063/5.0096133
Scopus
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2
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Aksenov M.S.
,
Valisheva N.A.
,
Gorshkov D.V.
,
Sidorov G.Y.
,
Prosvirin I.P.
,
Gutakovskii A.K.
Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers
Journal of Applied Physics. 2022.
V.131. N8. 085301
:1-9. DOI: 10.1063/5.0078405
WOS
Scopus
РИНЦ
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3
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Feklistov K.V.
,
Lemzyakov A.G.
,
Prosvirin I.P.
,
Gismatulin A.A.
,
Shklyaev A.A.
,
Zhivodkov Y.A.
,
Krivyakin G.К.
,
Komonov A.I.
,
Kozhukhov А.
,
Spesivsev E.V.
,
Gulyaev D.V.
,
Abramkin D.S.
,
Pugachev A.M.
,
Esaev D.G.
,
Sidorov G.Y.
Nanowired Structure, Optical Properties and Conduction Band Offset of RF Magnetron-Deposited n-Si\In2O3:Er Films
Materials Research Express. 2020.
V.7. N12. 125903
:1-11. DOI: 10.1088/2053-1591/abd06b
WOS
Scopus
РИНЦ
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4
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Zakirov E.R.
,
Kesler V.G.
,
Sidorov G.Y.
,
Prosvirin I.P.
,
Gutakovsky A.K.
,
Vdovin V.I.
XPS Investigation of the ALD Al2O3/HgCdTe Heterointerface
Semiconductor Science and Technology. 2019.
V.34. N6. 065007
:1-6. DOI: 10.1088/1361-6641/ab1961
WOS
Scopus
РИНЦ
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