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1
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Perevalov T.V.
,
Volodin V.A.
,
Kamaev G.N.
,
Krivyakin G.K.
,
Gritsenko V.A.
,
Prosvirin I.P.
Electronic Structure and Nanoscale Potential Fluctuations in Strongly Nonstoichiometric PECVD SiOx
Journal of Non-Crystalline Solids. 2020.
V.529. 119796
:1-4. DOI: 10.1016/j.jnoncrysol.2019.119796
WOS
Scopus
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2
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Gismatulin A.A.
,
Voronkovskii V.A.
,
Kamaev G.N.
,
Novikov Y.N.
,
Kruchinin V.N.
,
Krivyakin G.K.
,
Gritsenko V.A.
,
Prosvirin I.P.
,
Chin A.
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020.
V.31. N50. 505704
:1-10. DOI: 10.1088/1361-6528/abb505
WOS
Scopus
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3
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Volodin V.A.
,
Geydt P.
,
Kamaev G.N.
,
Gismatulin A.A.
,
Krivyakin G.K.
,
Prosvirin I.P.
,
Azarov I.A.
,
Fan Z.F.
,
Vergnat M.
Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters
Electronics. 2020.
V.9. N12. 2103
:1-17. DOI: 10.3390/electronics9122103
WOS
Scopus
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4
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Perevalov T.V.
,
Volodin V.A.
,
Novikov Y.N.
,
Kamaev G.N.
,
Gritsenko V.A.
,
Prosvirin I.P.
Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition
Physics of the Solid State. 2019.
V.61. N12. P.2560-2568. DOI: 10.1134/s1063783419120370
WOS
РИНЦ
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5
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Перевалов Т.В.
,
Володин В.А.
,
Новиков Ю.Н.
,
Камаев Г.Н.
,
Гриценко В.А.
,
Просвирин И.П.
Наноразмерные флуктуации потенциала в SiOx, синтезированном плазмохимическим осаждением
Физика твердого тела. 2019.
Т.61. №12. С.2528–2535. DOI: 10.21883/FTT.2019.12.48589.552
РИНЦ
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