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1
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Aksenov M.S.
,
Kokhanovskii A.Y.
,
Polovodov P.A.
,
Devyatova S.F.
,
Golyashov V.A.
,
Kozhukhov A.S.
,
Prosvirin I.P.
,
Khandarkhaeva S.E.
,
Gutakovskii A.K.
,
Valisheva N.A.
,
Tereshсhenko O.E.
InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge
Applied Physics Letters. 2015.
V.107. N17. P.173501-1-173501-5. DOI: 10.1063/1.4934745
WOS
Scopus
РИНЦ
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2
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Tereshchenko O.E.
,
Golyashov V.A.
,
Eremeev S.V.
,
Maurin I.
,
Bakulin A.V.
,
Kulkova S.E.
,
Aksenov M.S.
,
Preobrazhenskii V.V.
,
Putyato M.A.
,
Semyagin B.R.
,
Dmitriev D.V.
,
Toropov A.I.
,
Gutakovskii A.K.
,
Khandarkhaeva S.E.
,
Prosvirin I.P.
,
Kalinkin A.V.
,
Bukhtiyarov V.I.
,
Latyshev A.V.
Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications
Applied Physics Letters. 2015.
V.107. 123506
:1-5. DOI: 10.1063/1.4931944
WOS
Scopus
РИНЦ
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3
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Valisheva N.A.
,
Aksenov M.S.
,
Golyashov V.A.
,
Levtsova T.A.
,
Kovchavtsev A.P.
,
Gutakovskii A.K.
,
Khandarkhaeva S.E.
,
Kalinkin A.V.
,
Prosvirin I.P.
,
Bukhtiyarov V.I.
,
Tereshchenko O.E.
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014.
V.105. P.161601-161605. DOI: 10.1063/1.4899137
WOS
Scopus
РИНЦ
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