Numerical Study of One-Fold Coordinated Oxygen Atom in Silicon Gate Oxide Full article
Conference |
9th IEEE Hong Kong Electron Devices Meeting 22-22 Jun 2002 , Hong Kong |
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Source | Proceedings - IEEE Hong Kong Electron Devices Meeting, 9th, Hong Kong, China, June 22, 2002 Compilation, Institute of Electrical and Electronics Engineers. New York, N. Y.2002. ISBN 0780374290. |
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Output data | Year: 2002, Volume: 2002-January, Article number : 1029152, Pages count : 4 DOI: 10.1109/HKEDM.2002.1029152 | ||||||||||
Tags | Charge carrier processes; Dielectric devices; Dielectric substrates; Electron traps; Hydrogen; Luminescence; Oxidation; Oxygen; Physics; Silicon | ||||||||||
Authors |
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Affiliations |
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Funding (1)
1 | International Association for the Promotion of Co-operation with Scientists from the New Independent States of the Former Soviet Union | 97-0347 |
Abstract:
The capturing properties of nonbridging oxygen hole centers with unpaired electrons ≡SiO· and hydrogen defects ≡SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the ≡SiOH defect, which was proposed to be an electron or "water trap" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.
Cite:
Gritsenko V.A.
, Shaposhnikov A.
, Novikov Y.N.
, Baraban A.P.
, Wong H.
, Zhidomirov G.M.
, Roger M.
Numerical Study of One-Fold Coordinated Oxygen Atom in Silicon Gate Oxide
In compilation Proceedings - IEEE Hong Kong Electron Devices Meeting, 9th, Hong Kong, China, June 22, 2002. – Institute of Electrical and Electronics Engineers., 2002. – C.39-42. – ISBN 0780374290. DOI: 10.1109/HKEDM.2002.1029152 WOS Scopus РИНЦ
Numerical Study of One-Fold Coordinated Oxygen Atom in Silicon Gate Oxide
In compilation Proceedings - IEEE Hong Kong Electron Devices Meeting, 9th, Hong Kong, China, June 22, 2002. – Institute of Electrical and Electronics Engineers., 2002. – C.39-42. – ISBN 0780374290. DOI: 10.1109/HKEDM.2002.1029152 WOS Scopus РИНЦ
Identifiers:
Web of science | WOS:000178399000009 |
Scopus | 2-s2.0-84948780884 |
Elibrary | 26769716 |
Chemical Abstracts | 2003:194248 |
Chemical Abstracts (print) | 139:330825 |
OpenAlex | W2163956629 |