Atomic and Electronic Structures of a-SiNx:H Full article
Journal |
Journal of Experimental and Theoretical Physics
ISSN: 1063-7761 , E-ISSN: 1090-6509 |
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Output data | Year: 2019, Volume: 129, Number: 5, Pages: 924-934 Pages count : 11 DOI: 10.1134/S1063776119080132 | ||||||||||
Tags | OPTICAL-PROPERTIES; HYDROGEN | ||||||||||
Authors |
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Affiliations |
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Funding (3)
1 | Russian Science Foundation | 18-49-08001 (АААА-А18-118030590007-2) |
2 | Ministry of Science and Technology | 107-2923-E-009-001-MY3 |
3 | Russian Foundation for Basic Research | 19-29-03018 |
Abstract:
The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them. © 2019, Pleiades Publishing, Inc.
Cite:
Gritsenko V.A.
, Kruchinin V.N.
, Prosvirin I.P.
, Novikov Y.N.
, Chin A.
, Volodin V.A.
Atomic and Electronic Structures of a-SiNx:H
Journal of Experimental and Theoretical Physics. 2019. V.129. N5. P.924-934. DOI: 10.1134/S1063776119080132 WOS Scopus РИНЦ
Atomic and Electronic Structures of a-SiNx:H
Journal of Experimental and Theoretical Physics. 2019. V.129. N5. P.924-934. DOI: 10.1134/S1063776119080132 WOS Scopus РИНЦ
Original:
Гриценко В.А.
, Кручинин В.Н.
, Просвирин И.П.
, Новиков Ю.Н.
, Чин А.
, Володин В.А.
Строение и электронная структура a-SiNx:H
Журнал экспериментальной и теоретической физики. 2019. Т.156. №5(11). С.1003-1015. DOI: 10.1134/s0044451019110166 РИНЦ
Строение и электронная структура a-SiNx:H
Журнал экспериментальной и теоретической физики. 2019. Т.156. №5(11). С.1003-1015. DOI: 10.1134/s0044451019110166 РИНЦ
Dates:
Submitted: | Feb 15, 2019 |
Accepted: | Apr 11, 2019 |
Published print: | Nov 1, 2019 |
Published online: | Dec 24, 2019 |
Identifiers:
Web of science | WOS:000504188900016 |
Scopus | 2-s2.0-85077035845 |
Elibrary | 43221785 |
Chemical Abstracts | 2019:2469622 |
OpenAlex | W2997305342 |