Preparation and Properties of Thin HfO2 Films Full article
Journal |
Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
||||
---|---|---|---|---|---|
Output data | Year: 2005, Volume: 41, Number: 12, Pages: 1300-1304 Pages count : 5 DOI: 10.1007/s10789-005-0305-8 | ||||
Tags | CHEMICAL-VAPOR-DEPOSITION; ATOMIC-LAYER DEPOSITION; HAFNIUM OXIDE; Si; TEMPERATURE; INTERFACE; PRECURSOR; STABILITY; Si(100); OXYGEN | ||||
Authors |
|
||||
Affiliations |
|
Abstract:
HfO2 layers were grown on silicon by metalorganic chemical vapor deposition using (C5H5)2Hf(CH3)2, (C5H5)2Hf(N(C2H5)2)2, and Hf(dpm)4 as volatile precursors and were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, and IR spectroscopy. The films were shown to consist of monoclinic HfO2 and to contain hafnium silicide and silicate at the HfO2/Si interface. The presence of hafnium silicide was attributed to oxygen deficiency produced by argon ion milling. Hafnium silicate was formed as a result of the reaction between hafnium and silicon oxides during annealing. Current-voltage and capacitance-voltage measurements on Al/HfO2/Si test structures were used to determine the dielectric permittivity and electrical resistivity of the films: ɛ = 15–20, ρ ∼ 1015 cm.
Cite:
Yakovkina L.V.
, Kichai V.N.
, Smirnova T.P.
, Kaichev V.V.
, Shubin Y.V.
, Morozova N.B.
, Zherikova K.V.
, Igumenov I.K.
Preparation and Properties of Thin HfO2 Films
Inorganic Materials. 2005. V.41. N12. P.1300-1304. DOI: 10.1007/s10789-005-0305-8 WOS Scopus РИНЦ
Preparation and Properties of Thin HfO2 Films
Inorganic Materials. 2005. V.41. N12. P.1300-1304. DOI: 10.1007/s10789-005-0305-8 WOS Scopus РИНЦ
Original:
Яковкина Л.В.
, Кичай В.Н.
, Смирнова Т.П.
, Каичев В.В.
, Шубин Ю.В.
, Морозова Н.Б.
, Жерикова К.В.
, Игуменов И.К.
Получение и свойства тонких пленок HfO2
Неорганические материалы. 2005. Т.41. №12. С.1474-1479. RSCI РИНЦ
Получение и свойства тонких пленок HfO2
Неорганические материалы. 2005. Т.41. №12. С.1474-1479. RSCI РИНЦ
Dates:
Submitted: | Mar 23, 2005 |
Published print: | Dec 1, 2005 |
Identifiers:
Web of science | WOS:000234154800011 |
Scopus | 2-s2.0-29144490594 |
Elibrary | 13477320 |
Chemical Abstracts | 2005:1321974 |
Chemical Abstracts (print) | 145:93995 |
OpenAlex | W2323650135 |