Downstream Plasma-Enhanced Chemical Vapor Deposition of SiNx:H Films from Hexamethylcyclotrisilazane Full article
Journal |
Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
||
---|---|---|---|
Output data | Year: 1996, Volume: 32, Number: 6, Pages: 615-619 Pages count : 5 | ||
Tags | SILICON-NITRIDE; 1,1,3,3,5,5-HEXAMETHYLCYCLOTRISILAZANE | ||
Authors |
|
||
Affiliations |
|
Abstract:
SixN:H films were obtained from hexamethylcyclotrisilazane (HMCTSZN) by downstream plasma-enhanced chemical vapor deposition (DPECVD), a new version of PECVD. The deposition rate was measured as a function of process parameters in different plasma gases. It was shown that DPECVD with activated helium results in detachment of all organic groups and formation of carbon-free films. When ammonia gas was used at high pressures (p > 10 Pa) and discharge powers (W > 300 W), a deposition mechanism favorable for the desorption of organics from the substrate surface was realized.
Cite:
Smirnova T.P.
, Yakovkina L.V.
, Amosov Y.I.
, Danilovich O.V.
Downstream Plasma-Enhanced Chemical Vapor Deposition of SiNx:H Films from Hexamethylcyclotrisilazane
Inorganic Materials. 1996. V.32. N6. P.615-619. WOS Scopus РИНЦ
Downstream Plasma-Enhanced Chemical Vapor Deposition of SiNx:H Films from Hexamethylcyclotrisilazane
Inorganic Materials. 1996. V.32. N6. P.615-619. WOS Scopus РИНЦ
Original:
Смирнова Т.П.
, Яковкина Л.В.
, Амосов Ю.И.
, Данилович О.В.
Синтез слоев SiNx:H из гексаметилциклотрисилазана с использованием удаленной плазмы
Неорганические материалы. 1996. Т.32. №6. С.696-700.
Синтез слоев SiNx:H из гексаметилциклотрисилазана с использованием удаленной плазмы
Неорганические материалы. 1996. Т.32. №6. С.696-700.
Dates:
Submitted: | Mar 13, 1995 |
Published print: | Jun 1, 1996 |
Identifiers:
Web of science | WOS:A1996UV31600014 |
Scopus | 2-s2.0-0343344872 |
Elibrary | 13236033 |
Chemical Abstracts | 1996:408893 |
Chemical Abstracts (print) | 125:100542 |