The Structure of Si Nanocrystals on SiC Full article
Journal |
Journal of Electron Microscopy (up to 2012)
ISSN: 0022-0744 , E-ISSN: 1477-9986 |
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Output data | Year: 2001, Volume: 50, Number: 4, Pages: 311-319 Pages count : 9 DOI: 10.1093/jmicro/50.4.311 | ||||||
Tags | High-resolution TEM, Molecular beam epitaxy, Si nanocrystals, SiC, Strain analysis | ||||||
Authors |
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Abstract:
Si nanocrystals grown on cubic SiC have been characterized using high‐resolution transmission electron microscopy. At lower temperatures nanocrystals grow in two different orientations, whereas at higher temperatures they grow in a single preferred orientation. The nanocrystals are shown to be unstrained; in some cases possibly due to the presence of a thin amorphous wetting layer.
Cite:
Kaiser U.
, Chuvilin A.
, Saitoh K.
, Richter W.
The Structure of Si Nanocrystals on SiC
Journal of Electron Microscopy (up to 2012). 2001. V.50. N4. P.311-319. DOI: 10.1093/jmicro/50.4.311 WOS Scopus РИНЦ
The Structure of Si Nanocrystals on SiC
Journal of Electron Microscopy (up to 2012). 2001. V.50. N4. P.311-319. DOI: 10.1093/jmicro/50.4.311 WOS Scopus РИНЦ
Dates:
Submitted: | Apr 10, 2001 |
Accepted: | May 24, 2001 |
Published print: | Jul 1, 2001 |
Identifiers:
Web of science | WOS:000171067700004 |
Scopus | 2-s2.0-0034805298 |
Elibrary | 13387614 |
Chemical Abstracts | 2001:757651 |
Chemical Abstracts (print) | 136:61710 |
OpenAlex | W2043029871 |