Transmission Electron Microscopy Investigation of SiC Films Grown on SiC Substrates by Solid-Source Molecular Beam Epitaxy Full article
Journal |
Journal of Materials Research
ISSN: 0884-2914 , E-ISSN: 2044-5326 |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
Output data | Year: 1999, Volume: 14, Number: 8, Pages: 3226-3236 Pages count : 11 DOI: 10.1557/JMR.1999.0436 | ||||||||||
Tags | Atomic force microscopy; Crystal microstructure; Film growth; High temperature effects; Molecular beam epitaxy; Semiconducting silicon compounds; Silicon carbide; Substrates; Transmission electron microscopy | ||||||||||
Authors |
|
||||||||||
Affiliations |
|
Funding (2)
1 | German Research Foundation | 196 (No. A03) |
2 | Isaac Newton Trust |
Abstract:
The relationship between the defect microstructure of SiC films grown by solid-source molecular-beam epitaxy on 4H and 6H–SiC substrates and their growth conditions, for substrate temperatures ranging between 950 and 1300 °C, has been investigated by a combination of transmission electron microscopy and atomic force microscopy. The results demonstrate that the formation of defective cubic films is generally found to occur at temperatures below 1000 °C. At temperatures above 1000 °C our investigations prove that simultaneous supply of C and Si in the step-flow growth mode on vicinal 4H and 6H substrate surfaces results in defect-free hexagonal SiC layers, and defect-free cubic SiC can be grown by the alternating deposition technique. The controlled overgrowth of hexagonal on top of cubic layers is demonstrated for thin layer thicknesses.
Cite:
Kaiser U.
, Khodos I.
, Brown P.D.
, Chuvilin A.
, Albrecht M.
, Humphreys C.J.
, Fissel A.
, Richter W.
Transmission Electron Microscopy Investigation of SiC Films Grown on SiC Substrates by Solid-Source Molecular Beam Epitaxy
Journal of Materials Research. 1999. V.14. N8. P.3226-3236. DOI: 10.1557/JMR.1999.0436 WOS Scopus РИНЦ
Transmission Electron Microscopy Investigation of SiC Films Grown on SiC Substrates by Solid-Source Molecular Beam Epitaxy
Journal of Materials Research. 1999. V.14. N8. P.3226-3236. DOI: 10.1557/JMR.1999.0436 WOS Scopus РИНЦ
Dates:
Submitted: | Aug 17, 1998 |
Accepted: | Apr 14, 1999 |
Published print: | Aug 1, 1999 |
Published online: | Jan 31, 2011 |
Identifiers:
Web of science | WOS:000082550800011 |
Scopus | 2-s2.0-0032671809 |
Elibrary | 13330727 |
Chemical Abstracts | 1999:548704 |
Chemical Abstracts (print) | 131:265284 |
OpenAlex | W2147030594 |