Luminescence and Electronic Structure of Amorphous Silicon Nitride. Nitrogen Subsystem | Sciact - CRIS-system of Boreskov Institute of Catalysis

Luminescence and Electronic Structure of Amorphous Silicon Nitride. Nitrogen Subsystem Full article

Journal

Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779

Output data

Year: 2000, Volume: 41, Number: 3, Pages: 529-530 Pages count : 2 DOI: 10.1007/BF02742014

Tags

Silicon Nitride; Paramagnetic Center; Nitride Layer; Flat Band; Nitrogen Center

Authors

Belyi V.I. ¹ , Rastorguev A.A. ¹

Affiliations

1	Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk

Part one of this communication [1] described the nature of the electronic levels arising in the silicon subsystem of a-Si3N 4. Here we present the results of our investigations on the nitrogen subsystem.

Belyi V.I. , Rastorguev A.A.
Luminescence and Electronic Structure of Amorphous Silicon Nitride. Nitrogen Subsystem
Journal of Structural Chemistry. 2000. V.41. N3. P.529-530. DOI: 10.1007/BF02742014 WOS Scopus РИНЦ OpenAlex ANCAN

Белый В.И. , Расторгуев А.А.
Люминесценция аморфного нитрида кремния и его электронное строение. Азотная подсистема
Журнал структурной химии. 2000. Т.41. №3. С.647-649.

Submitted:	Mar 11, 1999
Published print:	May 1, 2000

≡ Web of science:	WOS:000165977600024
≡ Scopus:	2-s2.0-0034558868
≡ Elibrary:	13340781
≡ OpenAlex:	W2065299822
≡ Chemical Abstracts:	2001:2614
≡ Chemical Abstracts (print):	134:170279

≡ Scopus	0	Сбор данных от 22.02.2026
≡ OpenAlex	1	Сбор данных от 22.02.2026