Inertness and Degradation of (0001) Surface of Bi2Se3 Topological Insulator | Sciact - CRIS-система Института катализа

Inertness and Degradation of (0001) Surface of Bi2Se3 Topological Insulator Научная публикация

Журнал

Journal of Applied Physics
ISSN: 0021-8979 , E-ISSN: 1089-7550

Вых. Данные

Год: 2012, Том: 112, Номер: 11, Страницы: 113702 Страниц : 5 DOI: 10.1063/1.4767458

Ключевые слова

Adsorption; Calculations; Crystal growth from melt; Density functional theory; Molecular oxygen; Photoelectrons; Scanning tunneling microscopy; Selenium; Surface defects; X ray photoelectron spectroscopy

Авторы

Golyashov V.A. ¹ , Kokh K.A. ² , Makarenko S.V. ³ , Romanyuk K.N. ^1,3 , Prosvirin I.P. ⁴ , Kalinkin A.V. ⁴ , Tereshchenko O.E. ^1,3 , Kozhukhov A.S. ³ , Sheglov D.V. ³ , Eremeev S.V. ^5,6 , Borisova S.D. ^5,6 , Chulkov E.V. ^7,8

Организации

1	Novosibirsk State University, Novosibirsk 630090, Russian Federation
2	Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090, Russian Federation
3	Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation
4	Boreskov Institute of Catalysis, SB RAS, Novosibirsk 630090, Russian Federation
5	Institute of Strength Physics and Materials Science, 634021 Tomsk, Russia
6	Tomsk State University, 634050 Tomsk, Russia
7	Donostia International Physics Center (DIPC), 20018 San Sebastian/Donostia, Basque Country, Spain
8	Departamento de Fısica de Materiales UPV/EHU, Centro de Fısica de Materiales CFM-MPC and Centro

Информация о финансировании (5)

1	Национальный исследовательский Томский государственный университет
2	Российский фонд фундаментальных исследований	12-02-00226
3	University of the Basque Country	IT-366-07
4	Ministry of Economic Affairs and Digital Transformation	FIS2010-19609-C02-00
5	Региональный общественный Фонд содействия отечественной науке

Inertness of the cleaved (0001) surface of the Bi2Se3 single crystal, grown by modified Bridgman method, to oxidation has been demonstrated by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and by ab initio DFT calculations. No intrinsic bismuth and selenium oxides are formed on the low-defect, atomically flat Bi2Se3ð0001Þ-ð1 1Þ surface after a long-time air exposure. The inertness of Bi2Se3ð0001Þ to O2 and NO2, as well as bismuth-oxygen bonding formation under molecular adsorption in the Se vacancy was supported by DFT calculations.

Golyashov V.A. , Kokh K.A. , Makarenko S.V. , Romanyuk K.N. , Prosvirin I.P. , Kalinkin A.V. , Tereshchenko O.E. , Kozhukhov A.S. , Sheglov D.V. , Eremeev S.V. , Borisova S.D. , Chulkov E.V.
Inertness and Degradation of (0001) Surface of Bi2Se3 Topological Insulator

Journal of Applied Physics. 2012. V.112. N11. P.113702. DOI: 10.1063/1.4767458 WOS Scopus РИНЦ CAPlusCA OpenAlex

Полный текст от издателя

Поступила в редакцию:	23 окт. 2012 г.
Принята к публикации:	29 окт. 2012 г.
Опубликована в печати:	1 дек. 2012 г.
Опубликована online:	3 дек. 2012 г.

Web of science:	WOS:000312490700043
Scopus:	2-s2.0-84871191710
РИНЦ:	20487644
Chemical Abstracts:	2012:1766405
Chemical Abstracts (print):	158:27247
OpenAlex:	W2023594806

БД	Цитирований
Web of science	56
Scopus	60
РИНЦ	54
OpenAlex	62