Formation of HfO2/GaAs(001) Interface with Si Interlayer | Sciact - CRIS-система Института катализа

Formation of HfO2/GaAs(001) Interface with Si Interlayer Научная публикация

Сборник

2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings
Сборник, 2011.

Вых. Данные

Год: 2011, Страницы: 34-36 Страниц : 3 DOI: 10.1109/EDM.2011.6006887

Ключевые слова

GaAs, high-k dielectric, surface passivation

Авторы

Golyashov Vladimir A. ¹ , Aksenov Maxim S. ¹ , Valisheva Natalya A. ² , Prosvirin Igor P. ³ , Kalinkin Alexandr V. ³ , Preobrazhensky Valery V. ² , Putyato Mikhail A. ² , Semyagin Boris R. ² , Tereshhenko Oleg E. ^1,2

Организации

1	Novosibirsk State University, Novosibirsk, Russia
2	A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
3	Boreskov Institute of Catalysis, SB RAS, Novosibirsk, Russia

Composition and electrical characteristics of HfO2/Si/GaAs(001) interface formed by e-beam evaporation of Hf in NO2 ambient on MBE-grown Si/GaAs structure, were studied by XPS and C-V methods. The deposition of HfO2 on Si-passivated GaAs(001) surface leads to the formation of sharp HfO2/Si/GaAs interface without oxidation of Si interlayer. AFM studies of the HfO2/Si/GaAs(001) interface show that HfO2 deposition preserved the flatness of the surface, keeping the mean roughness on the terraces on a level of approximately 0.2-0.3 nm.

Golyashov V.A. , Aksenov M.S. , Valisheva N.A. , Prosvirin I.P. , Kalinkin A.V. , Preobrazhensky V.V. , Putyato M.A. , Semyagin B.R. , Tereshhenko O.E.
Formation of HfO2/GaAs(001) Interface with Si Interlayer
В сборнике 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings. 2011. – C.34-36. DOI: 10.1109/EDM.2011.6006887 Scopus РИНЦ CAPlusCA OpenAlex

Опубликована в печати:

1 июн. 2011 г.

Scopus:	2-s2.0-80052869545
РИНЦ:	18005873
Chemical Abstracts:	2012:1206295
Chemical Abstracts (print):	158:230436
OpenAlex:	W2104088208

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