Stability of (0001) Bi2Te3 surface | Sciact - CRIS-система Института катализа

Stability of (0001) Bi2Te3 surface Тезисы доклада

Конференция

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists
30 июн. - 4 июл. 2011 , Erlagol, Altai

Сборник

2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings
Сборник, 2011.

Вых. Данные

Год: 2011, Страницы: 66-67 Страниц : 3 DOI: 10.1109/EDM.2011.6006896

Ключевые слова

Bi 2Te3, Bi2Se3, Oxide, surface, Topological insulator

Авторы

Makarenko Sergey V. ¹ , Atuchin Viktor V. ² , Kokh Konstantin A. ³ , Golyashov Vladimir A. ¹ , Kozhukhov Anton S. ¹ , Prosvirin Igor P. ⁴ , Tereshhenko Oleg E. ^1,2

Организации

1	Novosibirsk State University, Novosibirsk 630090, Russia
2	A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
3	V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia
4	Boreskov Institute of Catalysis, SB RAS, Novosibirsk, Russia

The surface stability of single crystals Bi2Se3 and Bi2Te3 has been studied by XPS, AFM, STM and RHEED techniques. The Bi2Se3 and Bi2Te3 single crystals were grown by vertical Bridgman method. Crystal cleaving induced atomically flat surfaces over 1 cm2 area. XPS revealed that cleaved Bi2Se3 and Bi2Te3 surface were stable to oxidation over two months. The surfaces are sufficiently inert to obtain STM atomic resolution even in two weeks after cleaved.

Makarenko S.V. , Atuchin V.V. , Kokh K.A. , Golyashov V.A. , Kozhukhov A.S. , Prosvirin I.P. , Tereshhenko O.E.
Stability of (0001) Bi2Te3 surface
В сборнике 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings. 2011. – C.66-67. DOI: 10.1109/EDM.2011.6006896 Scopus РИНЦ OpenAlex CAPlusCA

Опубликована в печати:

1 июн. 2011 г.

≡ Scopus:	2-s2.0-80052839994
≡ РИНЦ:	18005633
≡ OpenAlex:	W2154790395
≡ Chemical Abstracts:	2012:1206304
≡ Chemical Abstracts (print):	157:306858

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≡ РИНЦ	0	Сбор данных от 22.02.2026
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