Formation of Inert Bi2Se3(0001) Cleaved Surface | Sciact - CRIS-система Института катализа

Formation of Inert Bi2Se3(0001) Cleaved Surface Научная публикация

Журнал

Crystal Growth and Design
ISSN: 1528-7483 , E-ISSN: 1528-7505

Вых. Данные

Год: 2011, Том: 11, Номер: 12, Страницы: 5507-5514 Страниц : 8 DOI: 10.1021/cg201163v

Ключевые слова

SINGLE DIRAC CONE; PHOTOELECTRON-SPECTROSCOPY; TOPOLOGICAL INSULATORS; ELECTRONIC-STRUCTURE; CRYSTAL-STRUCTURE; BISMUTH SELENIDE; GALLIUM SELENIDE; CORE LEVELS; XPS; OXIDATION

Авторы

Atuchin V.V. ¹ , Golyashov V.A. ² , Kokh K.A. ³ , Korolkov I.V. ⁴ , Kozhukhov A.S. ⁵ , Kruchinin V.N. ⁶ , Makarenko S.V. ² , Pokrovsky L.D. ¹ , Prosvirin I.P. ⁷ , Romanyuk K.N. ² , Tereshhenko O.E. ^2,8

Организации

1	Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
2	Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia
3	Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 630090, Russia
4	Laboratory of Crystal Chemistry, Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia
5	Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
6	Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
7	Boreskov Institute of Catalysis, SB RAS, Novosibirsk 630090, Russia
8	Laboratory of Molecular Beam Epitaxy of III-V Semiconductors, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

A high quality inclusion-free Bi2Se3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi2Se3(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi2Se3(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM.

Atuchin V.V. , Golyashov V.A. , Kokh K.A. , Korolkov I.V. , Kozhukhov A.S. , Kruchinin V.N. , Makarenko S.V. , Pokrovsky L.D. , Prosvirin I.P. , Romanyuk K.N. , Tereshhenko O.E.
Formation of Inert Bi2Se3(0001) Cleaved Surface
Crystal Growth and Design. 2011. V.11. N12. P.5507-5514. DOI: 10.1021/cg201163v WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	18 авг. 2011 г.
Принята к публикации:	5 окт. 2011 г.
Опубликована в печати:	7 дек. 2011 г.

Web of science:	WOS:000297609100045
Scopus:	2-s2.0-83055164402
РИНЦ:	18016956
Chemical Abstracts:	2011:1367152
Chemical Abstracts (print):	155:667579
OpenAlex:	W2186632699

БД	Цитирований
Web of science	118
Scopus	127
РИНЦ	115
OpenAlex	125