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First-Principle Study of Phosphine Adsorption on Si(001)-2x1-Cl Научная публикация

Журнал The Journal of Physical Chemistry C
ISSN: 1932-7447 , E-ISSN: 1932-7455
Вых. Данные Год: 2018, Том: 122, Номер: 3, Страницы: 1741-1745 Страниц : 5 DOI: 10.1021/acs.jpcc.7b11519
Ключевые слова CHLORINE; SI(100)
Авторы Pavlova T.V. 1,2 , Zhidomirov G.M. 1,2 , Eltsov K.N. 1,2
Организации
1 A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilov str. 38, 119991 Moscow, Russia
2 Faculty of Physics, National Research University Higher School of Economics, ulitsa Myasnitskaya 20, 101000 Moscow, Russia

Информация о финансировании (1)

1 Российский научный фонд 16-12-00050

Реферат: Abstract This paper presents a DFT study for phosphine adsorption on a Si(001)-2×1 surface covered by a chlorine monolayer, including adsorption on local defects, i.e. mono- and bivacancies in the adsorbate layer (Cl, Cl2), and combined vacancies with removed silicon atoms (SiCl, SiCl2). Activation barriers were found for the adsorbing PH3 to dissociate into PH2+H and PH+H2 fragments; it was also established that phosphine dissociation on combined vacancies is possible at room temperature. If there is a silicon vacancy on the surface, phosphorus settles in the Si(001) lattice as PH (if the vacancy is SiCl) or as PH2 (if the vacancy is SiCl2). This paper suggests a method to plant a separate phosphorus atom into the silicon surface layer with atomic precision, using phosphine adsorption on defects specially created on a Si(001)2×1-Cl surface with an STM tip.
Библиографическая ссылка: Pavlova T.V. , Zhidomirov G.M. , Eltsov K.N.
First-Principle Study of Phosphine Adsorption on Si(001)-2x1-Cl
The Journal of Physical Chemistry C. 2018. V.122. N3. P.1741-1745. DOI: 10.1021/acs.jpcc.7b11519 WOS Scopus РИНЦ CAPlusCA OpenAlex
Файлы: Полный текст от издателя
Даты:
Поступила в редакцию: 22 нояб. 2017 г.
Принята к публикации: 28 дек. 2017 г.
Опубликована online: 28 дек. 2017 г.
Опубликована в печати: 25 янв. 2018 г.
Идентификаторы БД:
Web of science: WOS:000423652700032
Scopus: 2-s2.0-85041177826
РИНЦ: 35538141
Chemical Abstracts: 2018:15694
Chemical Abstracts (print): 169:34705
OpenAlex: W2780478410
Цитирование в БД:
БД Цитирований
Scopus 28
Web of science 26
OpenAlex 29
Альметрики: