Laser-Induced Damage Threshold of BaGa4Se7 and BaGa2GeSe6 Nonlinear Crystals at 1.053 μm | Sciact - CRIS-система Института катализа

Laser-Induced Damage Threshold of BaGa4Se7 and BaGa2GeSe6 Nonlinear Crystals at 1.053 μm Научная публикация

Журнал

Journal of the Optical Society of America B – Optical Physics
ISSN: 0740-3224 , E-ISSN: 1520-8540

Вых. Данные

Год: 2019, Том: 36, Номер: 8, Страницы: 2260-2265 Страниц : 6 DOI: 10.1364/JOSAB.36.002260

Ключевые слова

DIFFERENCE-FREQUENCY-GENERATION; HIGH-EFFICIENCY; PULSES; POWER

Авторы

Kostyukova Nadezhda Y. ^1,2,3,4 , Boyko Andrey A. ^1,2,4 , Erushin Evgenii Y. ^2,3 , Kostyukov Anton I. ⁵ , Badikov Valeriy V. ⁶ , Badikov Dmitrii V. ⁶ , Kolker Dmitry B. ^1,2,3

Организации

1	Research Laboratory of Quantum Optics Technology, Novosibirsk State University, 2 Pirogova Str., 630090 Novosibirsk, Russia
2	Institute of Laser Physics SB RAS, Lavrentyev av. 15b, 630090 Novosibirsk, Russia
3	Novosibirsk State Technical University, K. Marx av. 20, 630073 Novosibirsk, Russia
4	Special Technologies, Ltd., 1/3 Zeljonaja gorka Str., 630060 Novosibirsk, Russia
5	Boreskov Institute of Catalysis SB RAS, Lavrentyev av. 5, 630090 Novosibirsk, Russia
6	High Technologies Laboratory, Kuban State University, 149 Stavropolskaya Str., 350040 Krasnodar, Russia

Информация о финансировании (1)

Российский фонд фундаментальных исследований

18-32-00105 (АААА-А18-118050390047-8)

We investigated the laser-induced damage threshold of two barium chalcogenides crystals, BaGa4Se7 and BaGa2GeSe6, at 1.053 mu m radiation with a pulse duration of 7-10 ns at different pulse repetition rates, namely, 100 Hz, 500 Hz, and 1 kHz. The R-on-1 procedure was applied to determine the 0% probability damage threshold. Both crystals have close values of surface damage threshold at 0.1 kHz, 299 MW/cm(2) (2.28 J/cm(2)) for BaGa2GeSe6, and 319 MW/cm(2) (2.30 J/cm(2)) for BaGa4Se7. (C) 2019 Optical Society of America

Kostyukova N.Y. , Boyko A.A. , Erushin E.Y. , Kostyukov A.I. , Badikov V.V. , Badikov D.V. , Kolker D.B.
Laser-Induced Damage Threshold of BaGa4Se7 and BaGa2GeSe6 Nonlinear Crystals at 1.053 μm
Journal of the Optical Society of America B – Optical Physics. 2019. V.36. N8. P.2260-2265. DOI: 10.1364/JOSAB.36.002260 WOS Scopus РИНЦ CAPlus OpenAlex

Поступила в редакцию:	26 мар. 2019 г.
Принята к публикации:	2 июл. 2019 г.
Опубликована online:	5 июл. 2019 г.
Опубликована в печати:	29 июл. 2019 г.

Web of science:	WOS:000478057200060
Scopus:	2-s2.0-85071402518
РИНЦ:	41792735
Chemical Abstracts:	2019:1695250
OpenAlex:	W2964459859

БД	Цитирований
Web of science	18
Scopus	21
РИНЦ	21
OpenAlex	16