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Features of the MOCVD Formation of MgO−RuO2 Electron-Emitting Film Structures Full article

Journal Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779
Output data Year: 2019, Volume: 60, Number: 8, Pages: 1352-1360 Pages count : 9 DOI: 10.1134/S002247661908016X
Tags metal-organic chemical vapor deposition; magnesium oxide; ruthenium oxide; film nanostructures; secondary electron; emission coefficient
Authors Vikulova E.S. 1 , Pochtar A.A. 2 , Morozova N.B. 1 , Vasilyeva I.G. 1
Affiliations
1 Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences
2 Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences

Funding (1)

1 Russian Foundation for Basic Research 18-08-01105 (АААА-А18-118013190035-2)

Abstract: Thin-film structures based on magnesium and ruthenium oxides are obtained by metal-organic chemical vapor deposition (MOCVD) on flat silicon substrates from volatile bis-(dipivaloylmethanato)(N, N, N’,N’-tetramethylethylenediamine)magnesium(II) and tris-(acetylacetonato)ruthenium(III) complexes in the presence of oxygen. The samples are studied by SEM, EDS, powder XRD, and differential dissolution; their emission characteristics are also measured. The features of the phase formation and the microstructure in the films formed are shown and different forms of magnesium and ruthenium oxides, including nonstoichiometric ones, are found. The MOCVD experimental parameters to form composite structures with high coefficients of electron-induced secondary electron emission (up to 7.2) are determined. These materials can be used as efficient emitting coatings in modern 3D electron multipliers.
Cite: Vikulova E.S. , Pochtar A.A. , Morozova N.B. , Vasilyeva I.G.
Features of the MOCVD Formation of MgO−RuO2 Electron-Emitting Film Structures
Journal of Structural Chemistry. 2019. V.60. N8. P.1352-1360. DOI: 10.1134/S002247661908016X WOS Scopus РИНЦ AN OpenAlex
Original: Викулова Е.С. , Почтарь А.А. , Морозова Н.Б. , Васильева И.Г.
Особенности формирования эмиссионных пленочных структур MgO-RuO2 методом MOCVD
Журнал структурной химии. 2019. Т.60. №8. С.1404-1412. DOI: 10.26902/JSC_id44210RSCI РИНЦ OpenAlex
Dates:
Submitted: Mar 22, 2019
Accepted: Apr 8, 2019
Published print: Aug 1, 2019
Published online: Sep 4, 2019
Identifiers:
Web of science: WOS:000486152800016
Scopus: 2-s2.0-85071913180
Elibrary: 41690994
Chemical Abstracts: 2019:1714437
OpenAlex: W2971717162
Citing:
DB Citing
Scopus 5
Web of science 4
Elibrary 3
OpenAlex 5
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