Abstract: Ir films were deposited on SiO2, Al2O3, Si and Cu by vapor thermolysis of tris(2,​4-​pentanedionato)​iridium(III) in the presence of H or O. The depth profile of the chemical composition of the films were studied by XPS with a special emphasis placed on the examination of the Ir-​substrate transition layers. For all systems studied, the films were found to constitute Ir in metallic state across the whole depth. Transition layers are produced in the region of Ir - substrate boundaries beyond some deposition temperature. The chemical compositions of the transition layers are different from those of metallic Ir and substrate materials. The effects of the chemical nature of substrate, deposition temperature and redox atmosphere on the chem. composition of the films are discussed. https://books.google.ru/books?id=1sDZ-1-y1zUC&printsec=frontcover&hl=ru&source=gbs_ViewAPI&redir_esc=y#v=onepage&q&f=false

Cite: Gelfond N.V. , Boronin A.I. , Smirnov M.Y. , Kvon R.I. , Igumenov I.K.
An XPS Study of the Influence of Iridium CVD Conditions on the Film Composition
In compilation Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. – Pennington, NJ : Electrochemical Society, c1997.., 1997. – C.1588-1595. – ISBN 1566771781. РИНЦ ANCAN

Identifiers:

Elibrary:	41752018
Chemical Abstracts:	1998:166185
Chemical Abstracts (print):	128:252193

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