Effect of Sn for the Dislocation-free SiSn Nanostructure Formation on the Vapor-Liquid-Crystal Mechanism | Sciact - CRIS-система Института катализа

Effect of Sn for the Dislocation-free SiSn Nanostructure Formation on the Vapor-Liquid-Crystal Mechanism Научная публикация

Журнал

AIP Advances
ISSN: 2158-3226

Вых. Данные

Год: 2020, Том: 10, Номер: 1, Номер статьи : 015309, Страниц : 7 DOI: 10.1063/1.5139936

Ключевые слова

Crystal structure; Dislocations (crystals); Energy dispersive spectroscopy; High resolution transmission electron microscopy; Liquid crystals; Molecular beam epitaxy; Nanostructures; Photoelectron spectroscopy; Photoluminescence; Semiconductor alloys;Silicon alloys

Авторы

Timofeev Vyacheslav ¹ , Mashanov Vladimir ¹ , Nikiforov Alexander ^1,2 , Skvortsov Ilya ^1,3 , Gavrilova Tatyana ¹ , Gulyaev Dmitry ¹ , Gutakovskii Anton ^1,3 , Chetyrin Igor ⁴

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia
2	National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia
3	Novosibirsk State University, 1 Pirogov Str., Novosibirsk 630090, Russia
4	Boreskov Institute of Catalysis SB RAS, 5 Lavrentyev Avenue, Novosibirsk 630090, Russia

Информация о финансировании (5)

1	Российский научный фонд	18-72-00090
2	Российский фонд фундаментальных исследований	18-32-20064 (АААА-А19-119090490028-1)
3	Российский фонд фундаментальных исследований	18-42-540018
4	Российский фонд фундаментальных исследований	18-52-41006 (АААА-А18-118060490033-9)
5	Российский научный фонд	19-72-30023

Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm. © 2020 Author(s).

Timofeev V. , Mashanov V. , Nikiforov A. , Skvortsov I. , Gavrilova T. , Gulyaev D. , Gutakovskii A. , Chetyrin I.
Effect of Sn for the Dislocation-free SiSn Nanostructure Formation on the Vapor-Liquid-Crystal Mechanism

AIP Advances. 2020. V.10. N1. 015309 :1-7. DOI: 10.1063/1.5139936 WOS Scopus РИНЦ CAPlus OpenAlex

Полный текст от издателя

Поступила в редакцию:	23 нояб. 2019 г.
Принята к публикации:	17 дек. 2019 г.
Опубликована в печати:	1 янв. 2020 г.
Опубликована online:	7 янв. 2020 г.

Web of science:	WOS:000519591400005
Scopus:	2-s2.0-85078287806
РИНЦ:	43238834
Chemical Abstracts:	2020:624587
OpenAlex:	W2999688213

БД	Цитирований
Scopus	3
Web of science	3
РИНЦ	6
OpenAlex	7