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Thermal- and Plasma-Enhanced Copper Film Deposition via a Combined Synthesis-Transport CVD Technique Научная публикация

Журнал Chemical Vapor Deposition
ISSN: 0948-1907 , E-ISSN: 1521-3862
Вых. Данные Год: 2014, Том: 20, Номер: 4-6, Страницы: 170-176 Страниц : 7 DOI: 10.1002/cvde.201307078
Ключевые слова Copper, Film deposition, Gas-transport process, MOCVD, Thin metal layers
Авторы Polyakov Maxim S. 1 , Badalyan Aram M. 1 , Kaichev Vasiliy V. 2 , Igumenov Igor K. 1
Организации
1 Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences Novosibirsk, 630090 (Russia)
2 Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences Novosibirsk, 630090 (Russia)

Информация о финансировании (1)

1 Российский фонд фундаментальных исследований 12-03-01018

Реферат: Metallic copper thin layers are deposited by means of a modified metal-organic (MO)CVD method via passing formic acid vapor through a finely dispersed powder of a solid metal-containing reactant (Cu/CuO) under thermal and plasma activation. To characterize the copper layers obtained, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) and UV-vis spectroscopy, scanning electron microscopy (SEM), diffraction of synchrotron radiation (DSR) analyses, and laser interferometry, are used. The layers are found to be crystalline with a nanometer-scale grain structure, the parameters of which depend on the experimental conditions and chemical composition, with a predominant content of copper in the metallic state, Cu0. It is revealed that the plasma activation causes a decrease in the mean size of copper grains, as well as film thickness. Average growth rates inherent in the films obtained under thermal and plasma conditions are calculated. Based on studying the composition of a gas-phase copper complex synthesized, a schematic diagram of chemical conversion is suggested for the combined synthesis-transport process (CST).
Библиографическая ссылка: Polyakov M.S. , Badalyan A.M. , Kaichev V.V. , Igumenov I.K.
Thermal- and Plasma-Enhanced Copper Film Deposition via a Combined Synthesis-Transport CVD Technique
Chemical Vapor Deposition. 2014. V.20. N4-6. P.170-176. DOI: 10.1002/cvde.201307078 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 13 июн. 2013 г.
Принята к публикации: 19 февр. 2014 г.
Опубликована online: 8 мая 2014 г.
Опубликована в печати: 1 июн. 2014 г.
Идентификаторы БД:
Web of science: WOS:000337673500010
Scopus: 2-s2.0-84902169422
РИНЦ: 24054537
Chemical Abstracts: 2014:920961
Chemical Abstracts (print): 162:543192
OpenAlex: W2062430641
Цитирование в БД:
БД Цитирований
Web of science 4
Scopus 5
РИНЦ 4
OpenAlex 4
Альметрики: