X-Ray Photoelectron Spectroscopy Depth Profiling of La 2O 3/Si Thin Films Deposited by Reactive Magnetron Sputtering | Sciact - CRIS-system of Boreskov Institute of Catalysis

X-Ray Photoelectron Spectroscopy Depth Profiling of La 2O 3/Si Thin Films Deposited by Reactive Magnetron Sputtering Full article

Journal

ACS Applied Materials and Interfaces
ISSN: 1944-8244 , E-ISSN: 1944-8252

Output data

Year: 2011, Volume: 3, Number: 11, Pages: 4370-4373 Pages count : 4 DOI: 10.1021/am201021m

Tags

high-k dielectric, lanthanum trioxide, RHEED, thin films, XPS

Authors

Ramana C.V. ¹ , Vemuri R.S. ¹ , Kaichev V.V. ^2,4 , Kochubey V.A. ³ , Saraev A.A. ^2,4 , Atuchin V.V. ⁴

Affiliations

1	Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968, United States
2	Boreskov Institute of Catalysis
3	Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia
4	Physical Department, Novosibirsk State University, Novosibirsk, 630090, Russia

The La2O3/Si thin films have been deposited by reactive DC magnetron sputtering. Amorphous state of La2O3 layer has been shown by RHEED observation. Top surface chemistry of the a-La2O3 has been evaluated with layer-by-layer depth profiling by ion bombardment and XPS measurements. It was found by core level spectroscopy that the top surface of the a-La2O3 film consists of hydrocarbon admixture, lanthanum carbonate, and hydroxides that formed as a result of contact with air atmosphere. Thickness of this top surface modified layer is below 1 nm for a contact time of ∼1.5 h with air at normal conditions

Ramana C.V. , Vemuri R.S. , Kaichev V.V. , Kochubey V.A. , Saraev A.A. , Atuchin V.V.
X-Ray Photoelectron Spectroscopy Depth Profiling of La 2O 3/Si Thin Films Deposited by Reactive Magnetron Sputtering
ACS Applied Materials and Interfaces. 2011. V.3. N11. P.4370-4373. DOI: 10.1021/am201021m WOS Scopus РИНЦ ANCAN OpenAlex

Submitted:	Aug 2, 2011
Accepted:	Oct 3, 2011
Published online:	Oct 3, 2011
Published print:	Nov 23, 2011

Web of science:	WOS:000297195500030
Scopus:	2-s2.0-84855884394
Elibrary:	18033653
Chemical Abstracts:	2011:1310738
Chemical Abstracts (print):	155:630324
OpenAlex:	W2322862231

DB	Citing
Web of science	147
Scopus	158
Elibrary	142
OpenAlex	157