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Probing Proximity Effects in the Ferromagnetic Semiconductor EuO Научная публикация

Журнал Applied Surface Science
ISSN: 0169-4332
Вых. Данные Год: 2019, Том: 488, Страницы: 107-114 Страниц : 8 DOI: 10.1016/j.apsusc.2019.05.191
Ключевые слова EuO; Gd; Ferromagnetism; Proximity effect
Авторы Averyanov Dmitry V. 1 , Tokmachev Andrey M. 1 , Parfenov Oleg E. 1 , Karateev Igor A. 1 , Sokolov Ivan S. 1 , Taldenkov Alexander N. 1 , Platunov Mikhail S. 2 , Wilhelm Fabrice 2 , Rogalev Andrei 2 , Storchak Vyacheslav G. 1
Организации
1 National Research Center “Kurchatov Institute”, Kurchatov Sq. 1, Moscow 123182, Russia
2 European Synchrotron Radiation Facility (ESRF), 38054 Grenoble Cedex, France

Реферат: Ferromagnetic insulators are widely employed to induce magnetic phenomena in adjacent layers via proximity effect. This approach could make non-magnetic materials (ranging from silicon to graphene) available for spintronic applications. Eu chalcogenides, EuO in particular, are highly efficient spin generators but suffer from low Curie temperatures. Here, experiments aimed at T-C increase in EuO by its integration with the ferromagnetic metal Gd are reported. The epitaxial bilayers Gd/EuO are synthesized on different substrates and characterized by a combination of diffraction and microscopy techniques. Their magnetic structure - established with magnetization and transport measurements as well as element-selective X-ray magnetic circular dichroism study - comprises coupled magnetic orders of EuO and Gd. EuO is robust against proximity effects - its T-C is still low, increased at most by a few tens of K. Nevertheless, the results encourage further studies of proximity-enhanced ferromagnetism to extend the range of applications of ultrathin layers of EuO in spintronics.
Библиографическая ссылка: Averyanov D.V. , Tokmachev A.M. , Parfenov O.E. , Karateev I.A. , Sokolov I.S. , Taldenkov A.N. , Platunov M.S. , Wilhelm F. , Rogalev A. , Storchak V.G.
Probing Proximity Effects in the Ferromagnetic Semiconductor EuO
Applied Surface Science. 2019. V.488. P.107-114. DOI: 10.1016/j.apsusc.2019.05.191 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 7 мар. 2019 г.
Принята к публикации: 16 мая 2019 г.
Опубликована online: 21 мая 2019 г.
Опубликована в печати: 15 сент. 2019 г.
Идентификаторы БД:
Web of science: WOS:000472476200013
Scopus: 2-s2.0-85066440963
РИНЦ: 41648364
Chemical Abstracts: 2019:1064367
Chemical Abstracts (print): 171:246301
OpenAlex: W2945607324
Цитирование в БД:
БД Цитирований
Web of science 6
Scopus 6
OpenAlex 6
Альметрики: