Advanced Passivation Techniques for Si Solar Cells with High-κ Dielectric Materials | Sciact - CRIS-система Института катализа

Advanced Passivation Techniques for Si Solar Cells with High-κ Dielectric Materials Научная публикация

Журнал

Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118

Вых. Данные

Год: 2014, Том: 105, Номер: 12, Страницы: 123905 Страниц : 5 DOI: 10.1063/1.4896619

Ключевые слова

SURFACE RECOMBINATION; SILICON; CHEMISTRY; FILMS

Авторы

Geng Huijuan ¹ , Lin Tingjui ² , Letha Ayra Jagadhamma ² , Hwang Huey-Liang ^1,2 , Kyznetsov Fedor A. ³ , Smirnova Tamara P. ³ , Saraev Andrey A. ⁴ , Kaichev Vasily V. ^4,5

Организации

1	Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China
2	Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
3	Nikolaev Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia
4	Boreskov Institute of Catalysis, 630090 Novosibirsk, Russia
5	Novosibirsk State University, 630090 Novosibirsk, Russia

Информация о финансировании (4)

1	Сибирское отделение Российской академии наук	9
2	National Natural Science Foundation of China	61274051
3	Ministry of Economic Affairs	102-EC-17-A-13-S1-173
4	Ministry of Science and Technology of the People's Republic of China	863, No. 2011AA050504

Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2O3, HfO2) and their compounds H(Hf)A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al2O3 film has been found to provide negative fixed charge (−6.4 × 1011 cm−2), whereas HfO2 film provides positive fixed charge (3.2 × 1012 cm−2). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO2 film would provide better passivation properties than that of the ALD-Al2O3 film in this research work.

Geng H. , Lin T. , Letha A.J. , Hwang H-L. , Kyznetsov F.A. , Smirnova T.P. , Saraev A.A. , Kaichev V.V.
Advanced Passivation Techniques for Si Solar Cells with High-κ Dielectric Materials
Applied Physics Letters. 2014. V.105. N12. P.123905. DOI: 10.1063/1.4896619 WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	28 июл. 2014 г.
Принята к публикации:	15 сент. 2014 г.
Опубликована в печати:	22 сент. 2014 г.
Опубликована online:	25 сент. 2014 г.

Web of science:	WOS:000343004400097
Scopus:	2-s2.0-84907481924
РИНЦ:	23991014
Chemical Abstracts:	2014:1611916
Chemical Abstracts (print):	161:553147
OpenAlex:	W2073699396

БД	Цитирований
Web of science	17
Scopus	19
РИНЦ	16
OpenAlex	17