In situ Tuning of Symmetry-Breaking-Induced Nonreciprocity in the Giant-Rashba Semiconductor BiTeBr | Sciact - CRIS-система Института катализа

In situ Tuning of Symmetry-Breaking-Induced Nonreciprocity in the Giant-Rashba Semiconductor BiTeBr Научная публикация

Журнал

Physical Review Research
, E-ISSN: 2643-1564

Вых. Данные

Год: 2021, Том: 3, Номер: 3, Номер статьи : 033253, Страниц : 11 DOI: 10.1103/physrevresearch.3.033253

Ключевые слова

Bismuth compounds; Bromine compounds; III-V semiconductors; Ionic liquids; Spin orbit coupling; Van der Waals forces

Авторы

Kocsis Mátyás ¹ , Zheliuk Oleksandr ² , Makk Péter ¹ , Tóvári Endre ¹ , Kun Péter ³ , Tereshchenko Oleg Evgenevich ^4,5,6 , Kokh Konstantin Aleksandrovich ^4,6,7 , Taniguchi Takashi ⁸ , Watanabe Kenji ⁹ , Ye Jianting ² , Csonka Szabolcs ¹

Организации

1	Department of Physics, Budapest University of Technology and Economics and MTA-BME Lendület Nanoelectronics Research Group, Budafoki út 8, 1111 Budapest, Hungary
2	Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
3	Institute of Technical Physics and Materials Science, MFA, Centre for Energy Research, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest, Hungary
4	St. Petersburg State University, 198504 St. Petersburg, Russia
5	A. V. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
6	Novosibirsk State University, 630090 Novosibirsk, Russia
7	V.S. Sobolev Institute of Geology and Mineralogy, 630090 Novosibirsk, Russia
8	International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
9	Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spinorbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.

Kocsis M. , Zheliuk O. , Makk P. , Tóvári E. , Kun P. , Tereshchenko O.E. , Kokh K.A. , Taniguchi T. , Watanabe K. , Ye J. , Csonka S.
In situ Tuning of Symmetry-Breaking-Induced Nonreciprocity in the Giant-Rashba Semiconductor BiTeBr
Physical Review Research. 2021. V.3. N3. 033253 :1-11. DOI: 10.1103/physrevresearch.3.033253 WOS Scopus CAPlus OpenAlex

Поступила в редакцию:	22 окт. 2020 г.
Принята к публикации:	14 июл. 2021 г.
Опубликована в печати:	16 сент. 2021 г.
Опубликована online:	16 сент. 2021 г.

Web of science:	WOS:000705660600001
Scopus:	2-s2.0-85115892221
Chemical Abstracts:	2021:2279064
OpenAlex:	W3199407186

БД	Цитирований
Scopus	4
Web of science	2
OpenAlex	4