Effect of Rashba Splitting on Ultrafast Carrier Dynamics in BiTeI | Sciact - CRIS-system of Boreskov Institute of Catalysis

Effect of Rashba Splitting on Ultrafast Carrier Dynamics in BiTeI Full article

Journal

Physical Review B (started in 2016)
ISSN: 2469-9950 , E-ISSN: 2469-9969

Output data

Year: 2021, Volume: 103, Number: 8, Article number : 085406, Pages count : 10 DOI: 10.1103/physrevb.103.085406

Tags

Bismuth compounds; Dynamic mechanical analysis; Dynamics; Narrow band gap semiconductors; Phonons; Spin orbit coupling; Spin polarization

Authors

Ketterl Anna S. ¹ , Andres Beatrice ¹ , Polverigiani Marco ¹ , Voroshnin Vladimir ^2,3 , Gahl Cornelius ¹ , Kokh Konstantin A. ^4,5 , Tereshchenko Oleg E. ^5,6 , Chulkov Evgueni V. ^2,7,8 , Shikin Alexander ² , Weinelt Martin ¹

Affiliations

1	Freie Universität Berlin, Fachbereich Physik, Arnimallee 14, 14195 Berlin, Germany
2	Saint Petersburg State University, Institute of Physics, Uljanovskaya 1, 198504 Saint Petersburg, Russia
3	Helmholtz-Zentrum Berlin für Materialien und Energie, Albert Einstein Straße 15, 12489 Berlin, Germany
4	V.S. Sobolev Institute of Geology and Mineralogy, 630090 Novosibirsk, Russia
5	Novosibirsk State University, 630090 Novosibirsk, Russia
6	A. V. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
7	Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM-MPC, and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain
8	International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain

Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.

Ketterl A.S. , Andres B. , Polverigiani M. , Voroshnin V. , Gahl C. , Kokh K.A. , Tereshchenko O.E. , Chulkov E.V. , Shikin A. , Weinelt M.
Effect of Rashba Splitting on Ultrafast Carrier Dynamics in BiTeI
Physical Review B (started in 2016). 2021. V.103. N8. 085406 :1-10. DOI: 10.1103/physrevb.103.085406 WOS Scopus ANCAN OpenAlex

Submitted:	Sep 17, 2020
Accepted:	Jan 14, 2021
Published print:	Feb 3, 2021
Published online:	Feb 3, 2021

Web of science:	WOS:000614271100003
Scopus:	2-s2.0-85101942177
Chemical Abstracts:	2021:661814
Chemical Abstracts (print):	174:817492
OpenAlex:	W3127471109

DB	Citing
Scopus	4
Web of science	3
OpenAlex	4