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Surface Chemical Treatment Effect on (1 1 1) PbSnTe < In > Topological Crystalline Insulator Films Научная публикация

Журнал Applied Surface Science
ISSN: 0169-4332
Вых. Данные Год: 2021, Том: 569, Номер статьи : 150930, Страниц : 6 DOI: 10.1016/j.apsusc.2021.150930
Ключевые слова Electronic structure; MBE; Photoemission; Surface treatment; Topological crystalline insulator
Авторы Tarasov A.S. 1 , Ishchenko D.V. 1 , Akhundov I.O. 1 , Golyashov V.A. 1,2 , Klimov A.E. 1,3 , Suprun S.P. 1 , Fedosenko E.V. 1 , Sherstyakova V.N. 1 , Rybkin A.G. 4 , Vilkov O.Yu. 4 , Tereshchenko O.E. 1,2
Организации
1 Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia
2 Novosibirsk State University, Novosibirsk 630090, Russia
3 Novosibirsk State Technical University, Novosibirsk 630073, Russia
4 St. Petersburg State University, St. Petersburg 198504, Russia

Реферат: In present work, the effect of Pb1-xSnxTe < In> (111) surface chemical treatment on electrophysical and optical properties was studied. It was shown that treatment of Pb1-xSnxTe < In> (111) surface in HCl-isopropanol (HCliPA) solution led to removal of native oxides and surface enrichment by elemental tellurium of several nm thickness. Subsequent anneals in vacuum led to desorption of elemental tellurium and revealing (1x1) surface structure. We present angle resolved photoemission spectroscopy (ARPES) measurements of the surface states on chemically prepared (111) oriented MBE-grown films of Pb1-xSnxTe, a three-dimensional topological crystalline insulator (TCI). The surface states with Dirac-like dispersion at Γ in the surface Brillouin zone were detected. The dark current and photocurrent were found in strong dependence on the surface chemical procedure and composition. The relative simplicity of the preparation technique is encouraging, and suggests a clear path for future investigations of TCI states on alternative surface orientations in (Pb,Sn)Te solid solutions and applied aspects of TCI research.
Библиографическая ссылка: Tarasov A.S. , Ishchenko D.V. , Akhundov I.O. , Golyashov V.A. , Klimov A.E. , Suprun S.P. , Fedosenko E.V. , Sherstyakova V.N. , Rybkin A.G. , Vilkov O.Y. , Tereshchenko O.E.
Surface Chemical Treatment Effect on (1 1 1) PbSnTe < In > Topological Crystalline Insulator Films
Applied Surface Science. 2021. V.569. 150930 :1-6. DOI: 10.1016/j.apsusc.2021.150930 WOS Scopus CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 25 февр. 2021 г.
Принята к публикации: 9 авг. 2021 г.
Опубликована online: 21 авг. 2021 г.
Опубликована в печати: 15 дек. 2021 г.
Идентификаторы БД:
Web of science: WOS:000711921500003
Scopus: 2-s2.0-85113409391
Chemical Abstracts: 2021:1878702
Chemical Abstracts (print): 184:326277
OpenAlex: W3194707363
Цитирование в БД:
БД Цитирований
Scopus 9
Web of science 8
OpenAlex 11
Альметрики: