Abstract: Three-layer iron-rich Fe3+xSi1−x/Ge/Fe3+xSi1−x (0.2 < x <0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1−x heterosystem due to the incorporation of Ge atoms into the Fe3+x Si1−x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+x Si1−x. The average lattice distortion and residual stress of the upper Fe3+xSi1−x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of −0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+x Si1−x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+x Si1−x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+x Si1−x, which implies the epitaxial orientation relationship of Fe3+x Si1−x (111)[0−11] || Ge(111)[1−10] || Fe3+x Si1−x (111)[0−11] || Si(111)[1−10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Cite: Tarasov A.S. , Tarasov I.A. , Yakovlev I.A. , Rautskii M.V. , Bondarev I.A. , Lukyanenko A.V. , Platunov M.S. , Volochaev M.N. , Efimov D.D. , Goikhman A.Y. , Belyaev B.A. , Baron F.A. , Shanidze L.V. , Farle M. , Varnakov S.N. , Ovchinnikov S.G. , Volkov N.V.
Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1−x/Ge/Fe3+xSi1−x Hybrid Structures: Effect on Magnetic and Electric Transport Properties
Nanomaterials. 2022. V.12. N1. 131 :1-21. DOI: 10.3390/nano12010131 WOS Scopus РИНЦ ANCAN PMID OpenAlex publication_identifier_short.sciact_skif_identifier_type

Dates:

Submitted:	Dec 1, 2021
Accepted:	Dec 26, 2021
Published online:	Dec 31, 2021
Published print:	Jan 1, 2022

Identifiers:

Web of science:	WOS:000742468900001
Scopus:	2-s2.0-85122027664
Elibrary:	47550770
Chemical Abstracts:	2022:121535
Chemical Abstracts (print):	181:181808
PMID:	35010081
OpenAlex:	W4206717645
publication_identifier.sciact_skif_identifier_type:	1882

Citing:

DB	Citing
Scopus	4
Web of science	3
Elibrary	2
OpenAlex	4

Altmetrics: