CCD272-64 and GSENSE400BSI-GP CMOS Quantum Efficiency Measurement in EUV and VUV | Sciact - CRIS-система Института катализа

CCD272-64 and GSENSE400BSI-GP CMOS Quantum Efficiency Measurement in EUV and VUV Научная публикация

Конференция

International Conference on Space Optics
30 мар. - 2 апр. 2021 , Paris

Сборник

Proceedings of SPIE - The International Society for Optical Engineering Сер. "International Conference on Space Optics, ICSO 2020" 2021
Сборник, 2021.

Вых. Данные

Год: 2021, Том: 11852, Страницы: 118525C-1-8 Страниц : 8 DOI: 10.1117/12.2599947

Ключевые слова

CCD matrices; CMOS; Extreme ultraviolet; Quantum efficiency; Silicon detectors; Synchrotron radiation; Vacuum ultraviolet; WSO-UV

Авторы

Shugarov Andrey ¹ , Vishnyakov Eugene A. ² , Nikolenko Anton D. ³ , Ivlyushkin Denis V. ³ , Zavertkin Pavel S. ³ , Kirichenko Alexey S. ³ , Kuzin Sergey V. ³ , Pertsov Andrey A. ³

Организации

1	Institute of Astronomy of the Russian Academy of Sciences
2	P.N.Lebedev Physical Institute of the Russian Academy of Sciences
3	Budker Institute of Nuclear Physics, Russian Academy of Sciences

We have measured the spectral quantum efficiency of several digital detectors in two spectral ranges, namely vacuum ultraviolet (VUV, 115-310 nm) and extreme ultraviolet (EUV, 10-58 nm) wavebands. We used monochromatic synchrotron radiation from the VEPP-4M storage ring (INP, Novosibirsk) to investigate the spectral response of GSENSE400BSI-GP CMOS which have been specially designed for optimum VUV sensitivity, as well as the WSO-UV project’s custom deep cooled CCD272-64 sealed within a hermetic contaminant-protective stainless-steel enclosure with a VUV-transparent entrance window. The CMOS GSENSE400BSI-GP sensitive surface has four types of different pretreatment: (i) small boron implantation dose, weak annealing; (ii) small boron implantation dose, strong annealing, (iii) large boron implantation dose, weak annealing; (iv) large boron implantation dose, strong annealing. These VUV optimised CMOS sensors have higher spectral sensitivity and higher quantum efficiency in the 112-180 nm spectral range, compared to a commercial CMOS which is typically optimised for the best performance at visible wavelengths, but at longer wavelengths GSENSE400BSI-GP sensitivity decreases. The measurements have revealed that stronger annealing can slightly increase the CMOS spectral sensitivity, while large boron implantation dose decreases the sensitivity of the CMOS sensors. With relation to quantum efficiency figures, CCD still prevails in the VUV while recent advances in CMOS technology could make CMOS more preferable in the EUV range.

Shugarov A. , Vishnyakov E.A. , Nikolenko A.D. , Ivlyushkin D.V. , Zavertkin P.S. , Kirichenko A.S. , Kuzin S.V. , Pertsov A.A.
CCD272-64 and GSENSE400BSI-GP CMOS Quantum Efficiency Measurement in EUV and VUV
В сборнике Proceedings of SPIE - The International Society for Optical Engineering Сер. "International Conference on Space Optics, ICSO 2020" 2021. 2021. – C.118525C-1-8. DOI: 10.1117/12.2599947 Scopus OpenAlex

Scopus:	2-s2.0-85116069476
OpenAlex:	W3173792601

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