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The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates Научная публикация

Журнал Nanomaterials
, E-ISSN: 2079-4991
Вых. Данные Год: 2022, Том: 12, Номер: 4, Номер статьи : 670, Страниц : 17 DOI: 10.3390/nano12040670
Ключевые слова Aluminum nitride; Gas cluster ion beam; Material characterization; Surface smoothing; Thin films
Авторы Nikolaev Ivan V. 1,2 , Geydt Pavel V. 1 , Korobeishchikov Nikolay G. 2 , Kapishnikov Aleksandr V. 1,3 , Volodin Vladimir A. 1,4 , Azarov Ivan A. 1,4 , Strunin Vladimir I. 5,6 , Gerasimov Evgeny Y. 3
Организации
1 Laboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, Russia
2 Department of Applied Physics, Novosibirsk State University, 630090 Novosibirsk, Russia
3 Boreskov Institute of Catalysis, Russian Academy of Sciences (Siberian Branch), 630090 Novosibirsk, Russia
4 Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences (Siberian Branch), 630090 Novosibirsk, Russia
5 Department of Experimental Physics and Radiophysics, Dostoevsky Omsk State University, 644077 Omsk, Russia
6 Institute of Radiophysics and Physical Electronics, Omsk Scientific Center, Russian Academy of Sciences (Siberian Branch), 644024 Omsk, Russia

Информация о финансировании (3)

1 Российский научный фонд 21-19-00046
2 Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) FSUS-2020-0029
3 Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) FSUS-2020-0039

Реферат: In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
Библиографическая ссылка: Nikolaev I.V. , Geydt P.V. , Korobeishchikov N.G. , Kapishnikov A.V. , Volodin V.A. , Azarov I.A. , Strunin V.I. , Gerasimov E.Y.
The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates
Nanomaterials. 2022. V.12. N4. 670 :1-17. DOI: 10.3390/nano12040670 WOS Scopus РИНЦ CAPlusCA PMID OpenAlex
Даты:
Поступила в редакцию: 7 дек. 2021 г.
Принята к публикации: 15 февр. 2022 г.
Опубликована в печати: 17 февр. 2022 г.
Опубликована online: 17 февр. 2022 г.
Идентификаторы БД:
Web of science: WOS:000925951800001
Scopus: 2-s2.0-85124988305
РИНЦ: 48183700
Chemical Abstracts: 2022:571501
Chemical Abstracts (print): 178:153792
PMID (PubMed): 35214998
OpenAlex: W4213134444
Цитирование в БД:
БД Цитирований
Scopus 3
РИНЦ 5
OpenAlex 5
Web of science 3
Альметрики: