Growth of Bi2Se3/graphene Heterostructures with the Room Temperature High Carrier Mobility | Sciact - CRIS-система Института катализа

Growth of Bi2Se3/graphene Heterostructures with the Room Temperature High Carrier Mobility Научная публикация

Журнал

Journal of Materials Science
ISSN: 0022-2461 , E-ISSN: 1573-4803

Вых. Данные

Год: 2021, Том: 56, Номер: 15, Страницы: 9330-9343 Страниц : 12 DOI: 10.1007/s10853-021-05836-y

Ключевые слова

Bismuth compounds; Graphene; Hall mobility; Hole mobility; Physical vapor deposition; Signal processing; Thickness measurement; Van der Waals forces

Авторы

Antonova I.V. ^1,2 , Nebogatikova N.A. ^1,3 , Stepina N.P. ¹ , Volodin V.A. ^1,2 , Kirienko V.V. ¹ , Rybin M.G. ^3,4 , Obrazstova E.D. ^3,4 , Golyashov V.A. ¹ , Kokh K.A. ^2,5,6 , Tereshchenko O.E. ^1,2

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk, Russia 630090
2	Novosibirsk State University, Pirogova str., 1, Novosibirsk, Russia 630090
3	Prokhorov General Physics Institute, RAS, Vavilov str. 38, Moscow, Russia 119991
4	Moscow Institute of Physics and Technology (State University), Kerchenskaya str. 1a, Moscow, Russia 117303
5	Kemerovo State University, Krasnaya str., 6, Kemerovo, Russia 650000
6	Sobolev Institute of Geology and Mineralogy, Koptyug av. 3, Novosibirsk, Russia 630090

Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of > 10 QL had resistivity as low as 200–500 Ω/sq and a high room temperature carrier mobility ~ 1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.

Antonova I.V. , Nebogatikova N.A. , Stepina N.P. , Volodin V.A. , Kirienko V.V. , Rybin M.G. , Obrazstova E.D. , Golyashov V.A. , Kokh K.A. , Tereshchenko O.E.
Growth of Bi2Se3/graphene Heterostructures with the Room Temperature High Carrier Mobility
Journal of Materials Science. 2021. V.56. N15. P.9330-9343. DOI: 10.1007/s10853-021-05836-y WOS Scopus CAPlusCA OpenAlex

Поступила в редакцию:	8 авг. 2020 г.
Принята к публикации:	25 янв. 2021 г.
Опубликована online:	18 февр. 2021 г.
Опубликована в печати:	1 мая 2021 г.

Web of science:	WOS:000619431100001
Scopus:	2-s2.0-85101023129
Chemical Abstracts:	2021:482673
Chemical Abstracts (print):	175:526026
OpenAlex:	W3129881380

БД	Цитирований
Scopus	11
Web of science	11
OpenAlex	12