Electronic Structure of Magnetic Topological Insulators Mn(Bi1–xSbx)2Te4 with Various Concentration of Sb Atoms | Sciact - CRIS-system of Boreskov Institute of Catalysis

Electronic Structure of Magnetic Topological Insulators Mn(Bi1–xSbx)2Te4 with Various Concentration of Sb Atoms Full article

Journal

Journal of Experimental and Theoretical Physics Letters (JETP Letters)
ISSN: 0021-3640 , E-ISSN: 1090-6487

Output data

Year: 2022, Volume: 115, Pages: 286–291 Pages count : 6 DOI: 10.1134/S0021364022100083

Tags

GAP; POINT

Authors

Glazkova D.A. ¹ , Estyunin D.A. ¹ , Klimovskikh I.I. ^1,2 , Makarova T.P. ¹ , Tereshchenko O.E. ^3,4,5 , Kokh K.A. ^5,6,7 , Golyashov V.A. ^3,4,5 , Koroleva A.V. ¹ , Shikin A.M. ¹

Affiliations

1	St. Petersburg State University, 198504, St. Petersburg, Russia
2	National University of Science and Technology MISiS, 119049, Moscow, Russia
3	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
4	Shared Access Center SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, 630559, Novosibirsk, Russia
5	Novosibirsk State University, 630090, Novosibirsk, Russia
6	Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
7	Kemerovo State University, 650000, Kemerovo, Russia

Funding (1)

Ministry of Science and Higher Education of the Russian Federation

075-15-2020-797 (13.1902.21.0024)

Intrinsic magnetic topological insulator MnBi2Te4 provides a promising platform to implement the quantum anomalous Hall effect at increased temperatures and other unique topological effects. However, to do this, the energy gap opening at the Dirac point should be located at the Fermi level. One of the widely used methods to shift the Dirac point toward the Fermi level is the partial substitution of Bi atoms for Sb atoms. In this work, the electronic structure of the core levels and valence band of Mn(Bi1 – xSbx)2Te4 compounds with various concentration x of Sb atoms from 0 to 1 has been studied. It has been shown that the Dirac point with an increase in the concentration of Sb atoms is shifted toward the Fermi level and becomes localized at it when x ≈ 0.3. In this case, the “rigid” shift of the valence band, including the Mn 3d level, has been observed without changes in the structure of the valence and conduction bands. The concentration dependence of the shift of the Dirac point is approximated by a square root function, which corresponds to a linear increase in the charge carrier density.

Glazkova D.A. , Estyunin D.A. , Klimovskikh I.I. , Makarova T.P. , Tereshchenko O.E. , Kokh K.A. , Golyashov V.A. , Koroleva A.V. , Shikin A.M.
Electronic Structure of Magnetic Topological Insulators Mn(Bi1–xSbx)2Te4 with Various Concentration of Sb Atoms
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2022. V.115. P.286–291. DOI: 10.1134/S0021364022100083 WOS Scopus РИНЦ AN OpenAlex publication_identifier_short.sciact_skif_identifier_type

Глазкова Д.А. , Естюнин Д.А. , Климовских И.И. , Макарова Т.П. , Терещенко О.Е. , Кох К.А. , Голяшов В.А. , Королева А.В. , Шикин А.М.
Электронная структура магнитных топологических изоляторов серии Mn(Bi1-xSbx)2Te4 при изменении концентрации атомов Sb
Письма в Журнал экспериментальной и теоретической физики. 2022. Т.115. №5-6. С.315-321. DOI: 10.31857/S1234567822050081 РИНЦ publication_identifier_short.sciact_skif_identifier_type

Submitted:	Feb 3, 2022
Accepted:	Feb 3, 2022
Published print:	Mar 1, 2022
Published online:	May 15, 2022

Web of science:	WOS:000796072800008
Scopus:	2-s2.0-85132608641
Elibrary:	49136184
Chemical Abstracts:	2022:1293496
OpenAlex:	W4280653294
publication_identifier.sciact_skif_identifier_type:	1532

DB	Citing
Scopus	8
Web of science	9
OpenAlex	7