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Topological States Induced by Local Structural Modification of the Polar BiTeI(0001) Surface Научная публикация

Журнал New Journal of Physics
ISSN: 1367-2630
Вых. Данные Год: 2018, Том: 20, Номер статьи : 063035, Страниц : 7 DOI: 10.1088/1367-2630/aac75e
Ключевые слова Rashba effect; spin-orbit interaction at surfaces; topological insulator
Авторы Fiedler Sebastian 1 , Eremeev Sergey V 2,3,4 , Golyashov Vladimir A 4,5 , Kaveev Andrey K 6 , Tereshchenko Oleg E 4,5,7 , Kokh Konstantin A 4,7,8 , Chulkov Evgueni V 3,4,9,10 , Bentmann Hendrik 1 , Reinert Friedrich 1
Организации
1 Experimentelle Physik VII and Röntgen Research Center for Complex Materials (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
2 Institute of Strength Physics and Materials Science, 634055, Tomsk, Russia
3 Tomsk State University, 634050, Tomsk, Russia
4 Saint Petersburg State University, 198504, Saint Petersburg, Russia
5 Institute of Semiconductor Physics, 636090, Novosibirsk, Russia
6 Ioffe Institute, 194021 Saint-Petersburg, Russia
7 Novosibirsk State University, 636090, Novosibirsk, Russia
8 Institute of Geology and Mineralogy, SB RAS, 630090, Novosibirsk, Russia
9 Donostia International Physics Center (DIPC), E-20018 San Sebastián/Donostia, Basque Country, Spain
10 Departamento de Física de Materiales and Centro Mixto CSIC-UPV/EHU, Facultad de Ciencias Químicas, Universidad del Pais Vasco/ Euskal Herriko Unibertsitatea, Apdo. 1072, E-20080 San Sebastián/Donostia, Basque Country, Spain

Реферат: The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.
Библиографическая ссылка: Fiedler S. , Eremeev S.V. , Golyashov V.A. , Kaveev A.K. , Tereshchenko O.E. , Kokh K.A. , Chulkov E.V. , Bentmann H. , Reinert F.
Topological States Induced by Local Structural Modification of the Polar BiTeI(0001) Surface
New Journal of Physics. 2018. V.20. 063035 :1-7. DOI: 10.1088/1367-2630/aac75e WOS Scopus CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 21 дек. 2017 г.
Принята к публикации: 23 мая 2018 г.
Опубликована в печати: 1 июн. 2018 г.
Идентификаторы БД:
Web of science: WOS:000435907600010
Scopus: 2-s2.0-85049384379
Chemical Abstracts: 2018:2425624
Chemical Abstracts (print): 176:144100
OpenAlex: W2804639031
Цитирование в БД:
БД Цитирований
Scopus 3
OpenAlex 3
Web of science 3
Альметрики: