Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes | Sciact - CRIS-система Института катализа

Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes Научная публикация

Журнал

Physical Review Applied (PRApplied)
ISSN: 2331-7043 , E-ISSN: 2331-7019

Вых. Данные

Год: 2017, Том: 8, Номер: 3, Номер статьи : 034026, Страниц : 8 DOI: 10.1103/physrevapplied.8.034026

Ключевые слова

Electrodes; Electron affinity; Electron-phonon interactions; Gallium arsenide; III-V semiconductors; Photodiodes; Photoemission; Semiconductor quantum wells

Авторы

Rodionov A.A. ¹ , Golyashov V.A. ¹ , Chistokhin I.B. ¹ , Jaroshevich A.S. ¹ , Derebezov I.A. ¹ , Haisler V.A. ¹ , Shamirzaev T.S. ^1,2 , Marakhovka I.I. ^1,2 , Kopotilov A.V. ³ , Kislykh N.V. ³ , Mironov A.V. ³ , Aksenov V.V. ³ , Tereshchenko O.E. ^1,2

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russian Federation
2	Novosibirsk State University, 630090 Novosibirsk, Russian Federation
3	CJSC “EKRAN FEP”, 630060 Novosibirsk, Russian Federation

The photoemission and injection properties of two GaAs/(Al,Ga)As electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitorlike vacuum photodiode. Both electrodes are bonded to the glass of the input windows, allowing measuring the quantum yield in the transmission and reflection modes. The photodiode with NEA states of both electrodes is sensitive to the illumination in the 400–900 nm range and produces the photocurrent with no bias applied between electrodes. The energy distribution of emitted electrons is studied as a function of the transverse energy component to the surface in the temperature range of 20–300 K. The presence of the fine structure in the photoemission spectra is associated with the electron-phonon coupling in two-dimensional quantized states in the band-bending region. The two-electrode vacuum photoemission system demonstrates the negative differential conductivity. The cathodoluminescence signal is measured as a function of free-electron injection energy with the threshold appearance less than 0.05 V between electrodes.

Rodionov A.A. , Golyashov V.A. , Chistokhin I.B. , Jaroshevich A.S. , Derebezov I.A. , Haisler V.A. , Shamirzaev T.S. , Marakhovka I.I. , Kopotilov A.V. , Kislykh N.V. , Mironov A.V. , Aksenov V.V. , Tereshchenko O.E.
Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes
Physical Review Applied (PRApplied). 2017. V.8. N3. 034026 :1-8. DOI: 10.1103/physrevapplied.8.034026 WOS Scopus CAPlusCA OpenAlex

Поступила в редакцию:	15 мая 2017 г.
Принята к публикации:	15 авг. 2017 г.
Опубликована в печати:	26 сент. 2017 г.

Web of science:	WOS:000411769900002
Scopus:	2-s2.0-85030084135
Chemical Abstracts:	2018:1473363
Chemical Abstracts (print):	169:436260
OpenAlex:	W2759898132

БД	Цитирований
Scopus	10
OpenAlex	14
Web of science	9